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US 6,714,446 B1Granted
Magnetoelectronics information device having a compound magnetic free layer
AssigneeMotorola, Inc.
InventorBradley N. Engel
Life of this patent
Estimating the term…
Abstract
A magnetoelectronics information device is provided that includes two multi-layer structures and a spacer layer interposed between the two multi-layer structures. Each of the multi-layer structures has two magnetic sublayers and a spacer layer interposed between the two magnetic sublayers. The spacer layer interposed between the two magnetic sublayers provides an antiferromagnetic exchange coupling that is quantified by a saturation field. The spacer layer interposed between the two multi-layer structures provides a second antiferromagnetic exchange coupling is quantified by another saturation field that is less than the first saturation field.
Claims19
A magnetoelectronics information device, comprising:
- a first multi-layer structure, said first multi-layer structure comprising:
- a first magnetic sublayer;
- a second magnetic sublayer;
- and
- a first spacer layer interposed between said first magnetic sublayer and said second magnetic sublayer, said first spacer layer providing a first antiferromagnetic exchange coupling between said first magnetic sublayer and said second magnetic sublayer that is quantified by a first saturation field (H1sat);
- a second multi-layer structure, said second multi-layer structure comprising:
- a third magnetic sublayer;
- a fourth magnetic sublayer;
- and
- a second spacer layer interposed between said third magnetic sublayer and said fourth magnetic sublayer, said second spacer layer providing a second exchange antiferromagnetic coupling between said third magnetic sublayer and said fourth magnetic sublayer that is quantified by a second saturation field (H2sat);
- and
- a third spacer layer interposed between said first multi-layer structure and said second multi-layer structure, said third spacer layer providing a third antiferromagnetic exchange between said first multi-layer structure that is quantified by a third saturation field (H3sat) that is less than said first saturation field (H1sat) and said second saturation field (H2sat).
9 more elements
A free magnetic region of a Magnetoelectronic Random Access Memory (MRAM) element, comprising:
- a first synthetic ferrimagnetic structures, said first synthetic ferrimagnetic sublayer comprising:
- a first ferromagnetic sublayer;
- a second ferromagnetic sublayer;
- and
- a first anti-parallel exchange coupling spacer layer interposed between said first ferromagnetic sublayer and said second ferromagnetic sublayer, said first anti-parallel exchange coupling spacer layer providing a first antiparallel exchange coupling between said first ferromagnetic sublayer and said second ferromagnetic sublayer that is quantified by a first saturation field (H1sat);
- a second synthetic ferrimagnetic free sublayer, said second synthetic ferrimagnetic free sublayer comprising:
- a third ferromagnetic sublayer;
- a fourth ferromagnetic sublayer;
- and
- a second anti-parallel exchange coupling spacer layer interposed between said third ferromagnetic sublayer and said fourth ferromagnetic sublayer, said second anti-parallel exchange coupling spacer layer providing a second antiparallel exchange coupling between said third ferromagnetic sublayer and said fourth ferromagnetic sublayer that is quantified by a second saturation field (H2sat);
- and
- a third antiparallel exchange coupling spacer layer interposed between said first synthetic ferrimagnetic free sublayer and said second synthetic ferrimagnetic free sublayer, said third antiparallel exchange coupling spacer layer providing a third anti-parallel exchange coupling between said first synthetic ferrimagnetic free sublayer and said second synthetic ferrimagnetic sublayer that is quantified by a third saturation field (H3sat) that is less than said first saturation field (H1sat) and said second saturation field (H2sat).
9 more elements
A free magnetic region of a Magnetoelectronic Random Access Memory (MRAM) element, comprising:
- a first synthetic ferrimagnetic structures, said first synthetic ferrimagnetic sublayer comprising:
- a first ferromagnetic sublayer;
- a second ferromagnetic sublayer;
- and
- a first anti-parallel exchange coupling spacer layer interposed between said first ferromagnetic sublayer and said second ferromagnetic sublayer, said first anti-parallel exchange coupling spacer layer providing a first antiparallel exchange coupling between said first ferromagnetic sublayer and said second ferromagnetic sublayer that is quantified by a first saturation field (H1sat);
- a second synthetic ferrimagnetic free sublayer, said second synthetic ferrimagnetic free sublayer comprising:
- a third ferromagnetic sublayer;
- a fourth ferromagnetic sublayer;
- and
- a second anti-parallel exchange coupling spacer layer interposed between said third ferromagnetic sublayer and said fourth ferromagnetic sublayer, said second anti-parallel exchange coupling spacer layer providing a second antiparallel exchange coupling between said third ferromagnetic sublayer and said fourth ferromagnetic sublayer that is quantified by a second saturation field (H2sat);
- a third antiparallel exchange coupling spacer layer interposed between said first synthetic ferrimagnetic free sublayer and said second synthetic ferrimagnetic free sublayer, said third antiparallel exchange coupling spacer layer providing a third anti-parallel exchange coupling between said first synthetic ferrimagnetic free sublayer and said second synthetic ferrimagnetic sublayer that is quantified by a third saturation field (H3sat) that is less than said first saturation field (H1sat) and said second saturation field (H2sat);
- and
- a pinned magnetic region.
10 more elements
Dependencies are inferred from the claim text.