Three terminal magnetic random access memory

A memory cell, comprising:

• a magnetic memory storage element;
• a first terminal forming part of a first conductor line, wherein an energized first conductor line applies a first magnetic field to the magnetic memory storage element;
• a second terminal forming part of a second conductor line, wherein an energized second conductor line applies a second magnetic field to the magnetic memory storage element;
• and
• a third terminal forming part of a third conductor line, wherein an energized third conductor line applies a third magnetic field to the magnetic memory storage element.

A memory device, comprising:

• a layer of parallel word lines, a layer of parallel bit lines, and a layer of parallel select lines, wherein from a top view the word lines, the bit lines and the select lines intersect at a number of cross points;
• an array of magnetic storage elements, each magnetic memory storage element having two stable states and being operably positioned at one of the cross points;
• and
• word line control circuitry to energize a selected word line, bit line control circuitry to energize a selected bit line, and select line control circuitry to energize a selected select line, wherein the word line control circuitry, the bit line control circuitry and the select line control circuitry cooperate to write to a selected magnetic storage element in the array.

A method for writing to a memory cell, comprising:

• applying a first magnetic field to a magnetic storage element in a selected direction;
• applying a second magnetic field to the magnetic storage element in a selected direction;
• and
• applying a third magnetic field to the magnetic storage element in a selected direction,
• wherein the first magnetic field, the second magnetic field and the third magnetic field are concurrently applied to the magnetic storage element.

A method for writing to a magnetic memory storage element, comprising:

• energizing a first line to apply a first magnetic field vector to the magnetic memory storage element;
• energizing a second line to apply a second magnetic field vector to the magnetic storage element;
• and
• energizing a third line to apply a third magnetic field vector to the magnetic storage element,
• wherein the first line, the second line and the third line are concurrently energized to write to the magnetic storage element.