Thin film magnetic memory device for writing data of a plurality of bits in parallel

A thin magnetic memory device, comprising:

• a memory array having a plurality of memory cells arranged in a matrix, each memory cell having an electric resistance that varies according to storage data magnetically written therein;
• a plurality of write digit lines arranged respectively corresponding to the plurality of memory cell rows, for passing therethrough a prescribed current of a fixed direction in a selected row in data write operation;
• a plurality of bit lines arranged respectively corresponding to the plurality of memory cell columns for passing therethrough a data write current of a direction corresponding to a level of write data in a selected column in said data write operation;
• first and second write current control lines respectively provided at both ends of said plurality of bit lines so as to extend in a direction along said memory cell rows, and shared by said plurality of bit lines;
• a first connection control portion for connecting one of said first and second write current control lines to a first voltage in said data write operation;
• a second connection control portion for connecting the other of said first and second write current control line to a second voltage in said data write operation;
• a plurality of column selection lines arranged respectively corresponding to said plurality of memory cell columns, and activated in a selected column;
• and
• write drivers provided respectively corresponding to said memory cell columns, and each connecting a corresponding one of said bit lines between said first and second write current control lines, in response to activation of a corresponding one of said plurality of column selection lines.