Active current bias network for compensating hot-carrier injection induced bias drift
AssigneeMotorola, Inc.
InventorJie Xu
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AssigneeMotorola, Inc.
InventorJie Xu
Estimating the term…
An active current bias network that compensates for Hot-Carrier Injection (HCI) induced bias drift, a common phenomenon existing in Metal-Oxide Semiconductor (MOS) transistors and especially in Laterally Diffused MOS (LDMOS) transistors. The active bias network of the present invention first senses the bias current flowing in the targeted transistor and then compares the bias current in the targeted transistor with a stable reference current. The difference between the bias current in the targeted transistor and the reference current is then utilized to adjust the bias of the targeted transistor via a current mirror feedback circuit. The bias current of the targeted transistor then is stable independent of any HCI induced bias changes and changes due to other adverse causes. The sensing MOS transistor used for monitoring bias current is operated in the triode region and has minimum effect on the performance of the targeted transistor.
An active bias current network, comprising:
An active bias current network, comprising:
A method for regulating the bias current in a transistor, comprising the steps of:
An active bias current network for stabilizing the bias current in a target transistor, comprising:
A method of regulating the bias current in a transistor, comprising the steps of:
Dependencies are inferred from the claim text.