Probe for direct wafer potential measurements
AssigneeLam Research Corporation
InventorsKonstantin Makhratchev, Mukund Srinivasan
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Abstract
An apparatus for measuring the DC bias voltage of a wafer in a chamber comprises an electrical coupling, a first filter, a second filter. The electrical coupling receives a probe for measuring the DC bias voltage in the chamber. The probe is disposed within the chamber. A first filter, coupled to the electrical coupling, is disposed within the chamber. A second filter, coupled to the first filter, is disposed outside the chamber.
Claims15
An apparatus for measuring a Direct Current DC bias voltage of a wafer in a chamber, the apparatus comprising:
- a probe for measuring the DC bias voltage of the wafer, said probe electrically coupled to a top surface of the wafer inside the chamber;
- a first Radio Frequency (RF) filter disposed inside the chamber, said first filter coupled to said probe;
- a second Radio Frequency (RF) filter disposed outside the chamber, said second filter coupled to said first filter;
- and
- a voltage measuring device coupled to said second filter,
- wherein said first filter filters an RF energy from the chamber before said RF energy is transferred outside the chamber.
An apparatus for measuring a Direct Current DC bias voltage of a wafer in a chamber, the apparatus comprising:
- a probe for measuring the DC bias voltage of the wafer, said probe electrically coupled to a top surface of the wafer inside the chamber;
- a first Radio Frequency (RF) filter disposed within the chamber, said first filter coupled to said probe;
- a second Radio Frequency (RF) filter disposed outside the chamber, said second filter coupled to said first filter;
- and
- a voltage measuring device coupled to said second filter
- wherein said first filter is coupled to said probe with a nickel wire, said nickel wire is at least partially electrically isolated within a dielectric material, said dielectric material further comprises an alumina tube.
A method for measuring the DC bias voltage on a wafer in a chamber, the method comprising:
- coupling a probe to a top surface of the wafer inside the chamber;
- filtering a voltage received by the probe with a first RF filter disposed within the chamber;
- and
- filtering the voltage received by the probe with a second RF filter disposed outside the chamber,
- wherein said first filter filters an RF enemy from the chamber before said RF energy is transferred outside the chamber.
A method for measuring the DC bias voltage on a wafer in a chamber, the method comprising:
- coupling a probe to a top surface of the wafer within the chamber;
- filtering a voltage received by the probe with a first RF filter disposed within the chamber;
- and
- filtering the voltage received by the probe with a second RF filter disposed outside the chamber,
- wherein said coupling comprises providing an indium contact on the top surface of the wafer, coupling said indium contact with a nickel wire, said nickel wire is at least partially electrically isolated within a dielectric material, said dielectric material further comprises an alumina tube.
An apparatus for measuring the DC bias voltage on a wafer in a chamber, the apparatus comprising:
- means for probing a top surface of the wafer inside the chamber,
- means for filtering a voltage received by the probe with a first RF filter disposed within the chamber, and
- means for filtering the voltage received by the probe with a second RF filter disposed outside the chamber,
- wherein said first filter filters an RF energy from the chamber before said RF energy is transferred outside the chamber.
Dependencies are inferred from the claim text.