Semiconductor devices with dual nature capping/arc layers on organic-doped silica glass inter-layer dielectrics
AssigneeAdvanced Micro Devices, Inc.
InventorsDawn M. Hopper, Lu You, Minh Van Ngo
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Abstract
Degradation of organic-doped silica glass low-k inter-layer dielectrics during fabrication is significantly reduced and resolution of submicron features is improved by the formation of dual nature capping/ARC layers on inter-layer dielectric films. The capping/ARC layer is formed in-situ on the organic-doped silica glass inter-layer dielectric. The in-situ formation of the capping/ARC layer provides a strongly adhered capping/ARC layer, formed with fewer processing steps than conventional capping and ARC layers.
Claims9
A semiconductor device comprising a first dielectric film formed on a semiconductor substrate, wherein the first dielectric film comprises:
- a lower layer comprising an organic-doped silica glass;
- a middle layer on the lower layer and comprising a mixture of an organic-doped silica glass and a gradually increasing concentration of SiC, wherein said lower layer is interposed between said semiconductor substrate and said middle layer;
- and
- an upper layer of SiC on the middle layer.
Dependencies are inferred from the claim text.