US 6,713,873 B1 · Adhesion between dielectric materials

Abstract

The present invention discloses a method including: determining whether a surface of a dielectric layer is reactive; activating the surface if the surface is not reactive; performing a cycle on the surface, the cycle including: reacting the surface with a metal; and activating the metal. The present invention also discloses a structure including: a substrate; a first interlayer dielectric located over the substrate; a first adhesion promoter layer located over the first interlayer dielectric; an etch stop layer located over the first adhesion promoter layer; a second adhesion promoter layer located over the etch stop layer; and a second interlayer dielectric located over the second adhesion promoter layer.

Claims3

Dependent claims

A structure comprising:

a substrate;
a first interlayer dielectric disposed over said substrate;
a first adhesion promoter layer disposed over said first interlayer dielectric;
an etch stop layer disposed over said first adhesion promoter layer;
a second adhesion promoter layer disposed over said etch stop layer;
and
a second interlayer dielectric disposed over said second adhesion promoter layer wherein said first and second interlayer dielectric layers each comprises Carbon-doped Oxide (CDO).

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

10/306,642Filed 27 Nov 2002

Granted

30 Mar 2004

Term ends

Not estimatedThe source records don’t support an estimate.

Classification20 codes

H10P 14/6506
Of treatments performed before formation of the materials: formation of intermediate materials
H10W 20/071
Manufacture or treatment: of dielectric parts thereof
H10W 20/075
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: of multilayered…
H10W 20/077
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: on sidewalls or on…

Abstract

Facts

Application

10/306,642Filed 27 Nov 2002

Granted

30 Mar 2004

Term ends

Not estimatedThe source records don’t support an estimate.

Classification20 codes

H10P 14/6506
Of treatments performed before formation of the materials: formation of intermediate materials
H10W 20/071
Manufacture or treatment: of dielectric parts thereof
H10W 20/075
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: of multilayered…
H10W 20/077
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: on sidewalls or on…

Adhesion between dielectric materials

Life of this patent

Abstract

Claims3

Adhesion between dielectric materials

Life of this patent

Abstract

Claims3