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US 6,713,868 B2Granted
Semiconductor device having leadless package structure
AssigneeKabushiki Kaisha Toshiba
InventorYutaka Ueno
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Abstract
A semiconductor device according to one embodiment includes a substrate, a semiconductor chip arranged on the substrate, a first electrode formed in the substrate and connected to the semiconductor chip, a concave portion provided on a side of the substrate, the concave portion being formed to a depth not to reach a top of the substrate from a back of the substrate, and at least part of the first electrode being exposed to the concave portion, and a metal layer formed on the at least part of the first electrode.
Claims15
A semiconductor device comprising:
- a substrate;
- a semiconductor chip arranged on the substrate;
- a first electrode formed in the substrate and connected to the semiconductor chip;
- a concave portion provided on a side of the substrate, the concave portion extending from a back of the substrate and not reaching a top of the substrate, and at least part of the first electrode being exposed to the concave portion;
- and
- a metal layer formed on said at least part of the first electrode.
3 more elements
Dependencies are inferred from the claim text.