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US 6,713,861 B2Granted
Method of removing free halogen from a halogenated polymer insulating layer of a semiconductor device and resulting semiconductor device
AssigneeMicron Technology, Inc.
InventorPaul Farrar
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Abstract
A method is disclosed for removal of free halogen from a semiconductor device insulating layer, in particular, a halogen-containing polymer insulating layer. The free halogen is removed by contacting the insulating material with hydrogen ions under conditions which generate gaseous hydrogen halide which is then removed. A semiconductor device containing such treated insulating materials is also disclosed. The invention is particularly useful in removing free fluorine from fluorinated polymer insulating layers.
Claims10
A semiconductor structure comprising:
- a substrate;
- and
- an insulating layer on said substrate, said insulating layer containing a halogen and having a surface which has been treated to remove free halogen therefrom.
A semiconductor device comprising:
- a substrate containing semiconductor features;
- and
- a fluorinated polymer layer covering said substrate, said fluorinated polymer layer having had free fluorine atoms removed therefrom by a contact of said fluorinated polymer layer with hydrogen ions.
Dependencies are inferred from the claim text.