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US 6,713,846 B1Granted
Multilayer high κ dielectric films
AssigneeAviza Technology, Inc.
InventorYoshihide Senzaki
Life of this patent
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Abstract
A new multilayer dielectric film for improving dielectric constant and thermal stability of gate dielectrics is provided. The multilayer dielectric film comprises a first layer formed of a metal oxide material having a high dielectric constant, and a second layer formed on the first layer. The second layer is formed of a metal silicate material having a dielectric constant lower than the dielectric constant of the first layer. A semiconductor transistor incorporating the multilayer dielectric film is also provided.
Claims13
A multilayer dielectric film comprising:
- a first layer having a first and second surfaces, said first layer is comprised of a metal oxide having a dielectric constant κ;
- a second layer formed on the first surface of said first layer;
- and
- a third layer formed on the second surface of said first layer;
- wherein said second and third layers are comprised of a metal silicate having a dielectric constant lower than the dielectric constant of said first layer.
2 more elements
A semiconductor transistor, comprising:
- a silicon substrate having a drain and a source region formed therein;
- a multilayer dielectric film formed atop said silicon substrate;
- and
- a gate formed atop the multilayer dielectric film;
- wherein said multilayer dielectric film comprises
- a first layer having a first and second surfaces, said first layer is comprised of a metal-oxide material having a dielectric constant κ;
- a second layer formed on the first surface of said first layer;
- and
- a third layer formed on the second surface of said first layer;
- wherein said second and third layers are comprised of a metal silicate material having a dielectric constant lower than the dielectric constant of said first layer.
7 more elements
Dependencies are inferred from the claim text.