Metal-insulator-metal device structure inserted into a low k material and the method for making same

A metal-insulator-metal capacitor (MIMC) structure inserted in a low-k material, the low-k material having a first low-k material layer at the bottom of the MIMC and a second low-k material layer on top of the MIMC, the structure comprising:

• a first sealing layer on top of the first low-k material layer;
• an out gas sealing layer on top of the first sealing layer;
• and
• a capacitor formed on top of the out gas sealing layer, the capacitor having a dielectric layer, a top plate, and a bottom plate,
• wherein the dielectric layer has a center portion having about the same width as the top plate, and two extended portions, each with a predetermined width and a predetermined minimum thickness, and wherein an overall width of the dielectric layer is the same as that of the bottom plate.

A metal-insulator-metal device (MIM) structure inserted in a low-k material, the low-k material having a first low-k material layer at the bottom of the MIM device structure and a second low-k material layer on the top thereof, the structure comprising:

• a first sealing layer on top of the first low-k material layer;
• an out gas sealing layer on top of the first sealing layer;
• and
• an electronic device formed on top of the out gas sealing layer, the device having at least one dielectric layer, and
• an etch stop layer on top of the electronic device but below the second low-k material layer,
• wherein the dielectric layer has a center portion and two extended portions, and
• wherein the extended portions each has a predetermined thickness that is smaller than that of the center portion and covered by the etch stop layer.