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US 6,713,834 B2Granted
Semiconductor device having two-layered charge storage electrode
AssigneeKabushiki Kaisha Toshiba
InventorsSeiichi Mori, Mitsuhiro Noguchi
Life of this patent
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Abstract
A first insulation film, a first conductor film, and a cap are sequentially formed on a semiconductor substrate. The first insulation film, the first conductor film, and the cap, and the substrate are etched in the same pattern. A second insulation film is placed in that etched pattern. The cap is removed. A second conductor film is formed on the side face of the second insulation film.
Claims27
A semiconductor device comprising:
- a semiconductor substrate including plural trenches on a surface;
- first and second insulators placed in the trenches respectively, and upper portions of side faces of said first and second insulators are higher than the surface of said substrate;
- a third insulation film disposed on the surface of said substrate, one end of said third insulation film contacts with said first insulator, and the other end of said third insulation film contacts with said second insulator;
- a first conductor disposed on a surface of said third insulation film, one end face of said first conductor contacts with said first insulator, and the other end face of said first conductor contacts with said second insulator;
- a second conductor disposed at a vicinity of said one end face of said first conductor and above said first conductor;
- a third conductor disposed at a vicinity of the other end face of said first conductor and above said first conductor;
- a fourth insulation film contacting with a first side face of said second conductor and a second side face of said third conductor and contacting with a top face of said first conductor;
- and
- a fourth conductor disposed on said fourth insulation film.
6 more elements
A semiconductor device comprising:
- a semiconductor substrate including plural trenches on a surface;
- first and second insulators placed in the trenches, respectively, and top faces of said first and second insulators are higher than the surface of said substrate;
- a third insulation film disposed on the surface of said substrate;
- a first conductor disposed on a surface of said third insulation film;
- a second conductor disposed on a surface of said first conductor, and a top face at an outer side of said second conductor is higher than a top face at an inner side of said second conductor, an interval between a first side face and a second side face of said second conductor is upwardly smaller;
- a fourth insulation film contacting with the top face of the inner side of said second conductor;
- and
- a fourth conductor disposed on said fourth insulation film.
5 more elements
A semiconductor device comprising:
- a semiconductor substrate including plural trenches on a surface;
- first and second insulators placed in the trenches, respectively, and top faces of said first and second insulators are higher than the surface of said substrate, said second insulator is larger in width than said first insulator, and the top face of said second insulator is higher than that of said first insulator;
- a third insulation film disposed on the surface of said substrate;
- a first conductor disposed on a surface of said third insulation film;
- a second conductor disposed on a surface of said first conductor, an interval between a first side face and a second side face of said second conductor is upwardly smaller;
- a fourth insulation film contacting with the top face of said second conductor;
- and
- a fourth conductor disposed on said fourth insulation film.
5 more elements
Dependencies are inferred from the claim text.