Vertical metal-semiconductor microresonator photodetecting device and production method thereof

Photodetection device configured to detect an incident light with a predefined wavelength, propagating in a propagation medium, comprising:

• an electrically insulating layer that does not absorb the incident light;
• and
• at least one element, including a semiconductor material and at least two biasing electrodes, formed on the electrically insulating layer and configured to be carried to respective potentials that are different from one another,
• the at least two biasing electrodes surrounding the at least one element,
• a set formed by the at least one element and the at least two biasing electrodes configured to absorb the incident light,
• the at least one element and the at least two biasing electrodes having a shape that is substantially parallelepipedal and extending following a same direction,
• dimensions of the at least two biasing electrodes and the at least one element, measured transversally to the same direction, being chosen, as a function of the predefined wavelength, to increase light intensity in the set formed by the at least one element and the at least two biasing electrodes, with respect to the incident light, making at least one of two modes resonate, including a first surface plasmon mode that is made to resonate between interfaces that the set includes with an insulating layer and a propagation medium, resonance of the first mode taking place at an interface between the at least one element and at least one of the at least two biasing electrodes, the first mode being excited by a component of a magnetic field associated with the incident light, a component that is parallel to the at least two biasing electrodes, and a second transverse electrical mode of an optical wave guide perpendicular to the insulating layer and that includes the at least two biasing electrodes, the second mode being excited by the component of the electrical field associated with the incident light, and the component is parallel to the at least two biasing electrodes.