Magnetoresistive element, memory element using the magnetoresistive element, and recording/reproduction method for the memory element
AssigneeCanon Kabushiki Kaisha
InventorsNaoki Nishimura, Takashi Ikeda
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Abstract
A magnetoresistive element includes first, second, and third magnetic layers and a nonmagnetic layer. The first magnetic layer is magnetized perpendicularly to the film surface. The second magnetic layer is magnetized perpendicularly to the film surface and has a coercive force higher than that of the first magnetic layer. The nonmagnetic layer is inserted between the first and second magnetic layers. The third magnetic layer has a coercive force higher than that of the first magnetic layer and is magnetized antiparallel to the second magnetic layer. A memory element and recording/reproduction method are also disclosed.
Claims13
A magnetoresistive element comprising:
- a first magnetic layer magnetized perpendicularly to a film plane;
- a second magnetic layer which is magnetized perpendicularly to the film surface and has a coercive force higher than a coercive force of said first magnetic layer;
- a nonmagnetic layer inserted between said first and second magnetic layers;
- and
- a third magnetic layer which has a coercive force higher than the coercive force of said first magnetic layer and is magnetized antiparallel to said second magnetic layer.
Dependencies are inferred from the claim text.