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US 6,713,813 B2Granted
Field effect transistor having a lateral depletion structure
AssigneeFairchild Semiconductor Corporation
InventorBruce D. Marchant
Life of this patent
Estimating the term…
Abstract
A field effect transistor device and a method for making a field effect transistor device are disclosed. The field effect transistor device includes a stripe trench extending from the major surface of a semiconductor substrate into the semiconductor substrate to a predetermined depth. The stripe trench contains a semiconductor material of the second conductivity type to form a PN junction at an interface formed with the semiconductor substrate.
Claims15
A field effect transistor device comprising:
- a semiconductor substrate of a first conductivity type having a major surface and a drain region;
- a well region of a second conductivity type formed in the semiconductor substrate;
- a source region of the first conductivity type formed in the well region;
- a trench gate electrode formed adjacent to the source region;
- and
- a stripe trench extending from the major surface of the semiconductor substrate into the semiconductor substrate to a predetermined depth, the stripe trench substantially completely filled with a semiconductor material of the second conductivity type to form a PN junction at an interface formed with the semiconductor substrate.
3 more elements
A field effect transistor device comprising:
- a semiconductor substrate of a first conductivity type having a major surface and a drain region;
- a well region of a second conductivity type formed in the semiconductor substrate;
- a source region of the first conductivity type formed in the well region;
- a trench gate electrode formed adjacent to the source region;
- and
- a stripe trench extending from the major surface of the semiconductor substrate into the semiconductor substrate to a predetermined depth, the stripe trench containing a semiconductor material of the second conductivity type to form a PN junction at an interface formed with the semiconductor substrate, wherein the stripe trench is lined with the semiconductor material of the second conductivity type and the remainder of the stripe trench is filled with a dielectric material.
3 more elements
Dependencies are inferred from the claim text.