Non-volatile devices, and electronic systems comprising non-volatile devices

A non-volatile device construction, comprising:

• a first electrically insulative material;
• a first crystalline Si/Ge layer over the first electrically insulative material;
• the first crystalline Si/Ge layer having a relaxed crystalline lattice;
• a second crystalline Si/Ge layer over the first crystalline Si/Ge layer;
• the second crystalline Si/Ge layer having a strained crystalline lattice;
• an electrically floating element over the second crystalline Si/Ge layer;
• an active region extending into the first and second crystalline Si/Ge layers proximate the floating element, the active region including a pair of source/drain regions gatedly connected with one another by the floating element;
• the active region within the first crystalline Si/Ge layer being within a single crystal of the first crystalline Si/Ge layer;
• and
• a control gate proximate the floating element and spaced from the floating element by one or more second insulative materials.

An electronic system, the electronic system comprising a memory device, the memory device including:

• an array of memory cells, at least some of the memory cells including an electrically floating element and a control gate separated from the floating element by one or more insulative materials;
• the at least some of the memory cells further comprising active regions proximate the floating elements;
• the active regions including source/drain regions gatedly connected by the floating elements;
• the active regions extending into a crystalline Si/Ge layer;
• wherein the active regions within the crystalline layer are each individually entirely contained within a single crystal of the crystalline layer;
• addressing circuitry coupled to the array of memory cells for accessing individual memory cells in the array of memory cells;
• and
• a read circuit coupled to the memory cell array for reading data from memory cells in the array of memory cells.