Magnetic tunnel junction patterning using SiC or SiN

A method of manufacturing a magnetic memory device, comprising:

• providing a workpiece;
• depositing a first insulating layer over the workpiece;
• forming at least one first conductive line in the first insulating layer;
• depositing a second insulating layer over the at least one first conductive line and first insulating layer;
• forming a via within the second insulating layer, the via abutting the at least one first conductive line;
• depositing a pinning layer over the via and second insulating layer;
• depositing a soft layer material over the pinning layer;
• depositing a first hard mask over the soft layer material, the first hard mask comprising a conductive material;
• patterning the first hard mask;
• using the first hard mask to pattern the soft layer material and form at least one magnetic memory cell;
• depositing a second hard mask over the first hard mask and exposed portions of the pinning layer, the second hard mask comprising a dielectric material having a Young's modulus greater than the Young's modulus of silicon dioxide;
• patterning the second hard mask;
• using the second hard mask to pattern the pinning layer;
• depositing a third insulating layer over the second hard mask, the third hard mask comprising a dielectric material having a Young's modulus greater than the Young's modulus of silicon dioxide;
• and
• planarizing the workpiece to remove portions of the third insulating layer from over a top surface of the first hard mask.

A magnetic memory device, comprising:

• a workpiece;
• at least one first conductive line disposed over the workpiece;
• a pinning layer coupled to the at least one first conductive line;
• a soft layer disposed over the pinning layer, the soft layer having sidewalls and comprising a magnetic memory cell;
• a first hard mask disposed over the soft layer, the first hard mask having substantially the same lateral dimensions as the soft layer, the first hard mask having sidewalls and a top surface, the first hard mask being conductive;
• a second hard mask disposed over the pinning layer, the top surface and sidewalls of the first hard mask, and over the sidewalls of the soft layer, wherein the second hard mask comprises substantially the same lateral dimensions as the pinning layer, wherein the second hard mask comprises SiC, SiON, SiCN or SiN;
• a first insulating layer disposed over at least the second hard mask, wherein the first insulating layer comprises SiC, SiON, SiCN or SiN;
• and
• at least one second conductive line disposed over and abutting the first hard mask, wherein the at least one second conductive line runs in a different direction than the at least one first conductive line.