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US 6,713,797 B1Granted
Textured Bi-based oxide ceramic films
AssigneesAdvanced Technology Materials, Inc., Infineon Technologies North America Corp.
InventorsDebra A. Desrochers, Bryan C. Hendrix, Jeffrey F. Roeder, Frank S. Hintermaier
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Abstract
A non-volatile memory cell wherein the capacitor comprises a Bi-based metal oxide having a crystallographic texture to produce high switchable polarization.
Claims38
A ferroelectric device comprising:
- a conductive layer;
- and
- a Bi-based ferroelectric layer electrically contacting the conductive layer,
- said Bi-based ferroelectric layer having a 2Pr value of between 15 and 20 and being formed by chemical vapor depositing at a temperature that is between about 280° C. and a temperature less than 400° C., a substantially amorphous ceramic layer having a composition YaBibX2Oc;
- and annealing the substantially amorphous ceramic layer,
- wherein Y of the ceramic layer composition represents a 2-valent cation in less than a stoichiometric amount and X of the ceramic layer composition represents a 5-valent cation.
3 more elements
A ferroelectric device comprising:
- a conductive layer;
- and
- a Bi-based ferroelectric layer having a 2Pr of between 15 and 20, electrically contacting the conductive layer,
- wherein said Bi-based ferroelectric layer comprises an SBT derivative formed by depositing a Bi-based oxide ceramic layer in substantially amorphous form by chemical vapor deposition at a temperature that is between 280° C. and temperature less than 400° C., and annealing the substantially amorphous Bi-based oxide ceratnic layer, wherein the Bi-based oxide cerarnic layer is selected from the group comprising SraBibTa2−xNbxOc (0<x<2), SraBibNb2Oc, Sra−xBibTa2−yNbyOc (0≦x≦a, 0≦y≦2), Sra−xCaxBibTa2−yNbyOc (0≧x≧a, 0≧y≧2), Sra−xPbxBibTa2−yNbyOc (0≧x≧a, z0≧y≧2), or Sra−x−y−zBaxCayPbzBibTa2−pNbpOc (0≦x≦a, 0≦y≦a, 0≦z≦a, 0≦p≦2), wherein the subscript a in said Bi-based oxide ceremic is less 1.
1 more element
Dependencies are inferred from the claim text.