Thin film transistors with self-aligned transparent pixel electrode
AssigneeInternational Business Machines Corporation
InventorsEvan G. Colgan, Kai R. Schleupen, Takatoshi Tsujimura
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Abstract
A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole down to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.
Claims18
A pixel cell comprising:
- a thin film transistor structure formed on a substrate;
- a signal conductor patterned on the thin film transistor structure;
- a first patterned layer of a transparent conductive material that covers the signal conductor, the first patterned layer providing a pattern employed in etching a channel region of the thin film transistor structure;
- a dielectric layer formed over the pixel cell and including a via hole down to the first patterned layer of the transparent conductive material;
- and
- a second layer of transparent conductive material that extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.
A pixel cell comprising:
- a thin film transistor structure formed over a substrate;
- a signal conductor formed over the thin film transistor structure;
- a first transparent conductive material layer formed over the signal conductor;
- a dielectric layer formed over the first transparent conductive material layer, the dielectric layer including a via hole down to the first transparent conductive material layer;
- and
- a second transparent conductive material layer formed over the dielectric layer, the second transparent conductive material layer extending through the via hole to contact the first transparent conductive material layer, wherein the second transparent conductive material layer is self-aligned to the transistor structure.
Dependencies are inferred from the claim text.