Thin film transistor and display device having the same
AssigneeFuji Xerox Co., Ltd.
InventorShigeru Yagi
Life of this patent
Estimating the term…
Abstract
A thin film transistor has, on a transparent substrate, a transparent semiconductor layer containing nitrogen, hydrogen and one or more elements selected from Al, Ga and In, a transparent source electrode and a transparent drain electrode at least partially in contact with the transparent semiconductor layer, and a transparent gate electrode.
Claims9
A thin film transistor comprising, on a transparent substrate:
- a transparent semiconductor layer containing nitrogen, hydrogen and one or more elements selected from Al, Ga and In;
- a transparent source electrode and a transparent drain electrode at least partially in contact with the transparent semiconductor layer;
- and
- a transparent gate electrode.
A thin film transistor comprising, on a transparent substrate:
- a transparent semiconductor layer containing nitrogen, hydrogen and one or more elements selected from Al, Ga and In;
- a transparent source electrode and a transparent drain electrode at least partially in contact with the transparent semiconductor layer;
- and
- a transparent gate electrode;
- wherein a transparent insulative layer is disposed between the transparent gate electrode and the transparent semiconductor layer, and the transparent insulative layer is a semiconductor layer containing nitrogen, 0.5 atomic % or more and 50 atomic % or less of hydrogen and one or more elements selected from Al, Ga and In.
A display device comprising a thin film transistor having, on a transparent substrate, a transparent semiconductor layer containing nitrogen, hydrogen and one or more elements selected from Al, Ga and In, a transparent source electrode and a transparent drain electrode at least partially in contact with the transparent semiconductor layer, and a transparent gate electrode.
Dependencies are inferred from the claim text.