Junction-side illuminated silicon detector arrays

A detector array formed on a semiconductor material having a first side and a second side, the detector array comprising:

• an entrance window formed on the first side, the entrance window being used to receive radiation;
• an array of detectors formed on the second side, one or more of the detectors being used for detecting the radiation received via the entrance window;
• and
• a grid surrounding one or more detectors,
• wherein the entrance window forms a junction with the semiconductor material, and the detectors comprise pixelated ohmic contacts, and
• wherein the grid surrounding the detectors comprises an inner grid surrounding one or more detectors and an outer grid surrounding the inner grid, wherein a first pixel size is achieved by biasing the inner grid and a second pixel size is achieved by biasing the outer grid, wherein the second pixel size is larger than the first pixel size.

A method of forming a detector array on a high resistivity semiconductor material having a first side and a second side, the method comprising the steps of:

• forming an entrance window on the first side, the entrance window is for receiving radiation;
• and
• forming an array of detectors on the second side, one or more of the detectors are used for detecting the radiation received via the entrance window,
• wherein the entrance window forms a junction with the high resistivity semiconductor material, and the detectors comprise pixelated ohmic contacts.

A method of forming a detector array on a semiconductor material having a first side and a second side, the method comprising the steps of:

• forming an entrance window on the first side, the entrance window is for receiving radiation;
• forming an array of detectors on the second side, one or more of the detectors are used for detecting the radiation received via the entrance window;
• and
• forming a grid that surrounds one or more detectors,
• wherein the entrance window forms a junction with the semiconductor material, and the detectors comprise pixelated ohmic contacts, and
• wherein the grid surrounding the detectors comprises an inner grid surrounding one or more detectors and an outer grid surrounding the inner grid, wherein a first pixel size is achieved by biasing the inner grid and a second pixel size is achieved by biasing the outer grid, wherein the second pixel size is larger than the first pixel size.

A composite detector array comprising a plurality of detector arrays, wherein at least one of the detector arrays includes a detector array formed on a high resistivity semiconductor material having a first side and a second side, the detector array comprising:

• an entrance window formed on the first side, the entrance window being used to receive radiation;
• and
• an array of detectors formed on the second side, one or more of the detectors being used to detect the radiation received via the entrance window,
• wherein the entrance window forms a junction with the high resistivity semiconductor material, and the detectors comprise pixelated ohmic contacts.