Oxide thin film for a bolometer, process for producing the same, and infrared sensor using the same
AssigneeNEC Corporation
InventorsTsutomu Yoshitake, Hideto Imai
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Abstract
A thin film made of a cobalt-based oxide represented by YBaCo2O5.5+x (−0.5<x<0.05) is used as a resistor material for a bolometer. Provided is also an infrared sensor having a microbridge structure and using the cobalt-based oxide thin film. The temperature coefficient of the electric resistance thereof can be made large.
Claims12
An oxide thin film for a bolometer, a resistance of which changes dependently on a temperature change following incidence of infrared rays, comprising a cobalt-based oxide represented by YBaCo2O5.5+x (−0.5<x<0.05).
A fabricating method of an oxide thin film comprising a cobalt-based oxide represented by YBaCo2O5.5+x (−0.5<x<0.05) for a bolometer, wherein said method comprising the step of:
- forming said oxide thin film on an insulating substrate using a sol-gel process.
A fabricating method of an oxide thin film comprising a cobalt-based oxide represented by YBaCo2O5.5+x (−0.5<x<0.05) for a bolometer, wherein said method comprising the step of:
- forming said oxide thin film on an insulating substrate using a physical film-forming process.
A fabricating method of an oxide thin film comprising a cobalt-based oxide represented by YBaCo2O5.5+x (−0.5<x<0.05) for a bolometer, wherein said method comprising the steps of:
- applying onto an insulating substrate a solution in which an organic metal compound is dissolved in a solvent,
- drying said applied solution on said insulating substrate, and
- radiating a laser ray onto said solution so as to crystallize said solution.
An infrared sensor having an oxide thin film comprising a cobalt-based oxide represented by YBaCO2O5.5+x (−0.5<x<0.05) used as a resistor member of a bolometer.
Dependencies are inferred from the claim text.