US 6,713,748 B1 · Image detection device · patentgrep

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Abstract

An image detection device includes a pixel portion (OEF) having a photoelectric conversion film for converting incident light into a signal charge and a pixel capacitor for accumulating the signal charge, and a thin film transistor (TFT1) included in a signal detective circuit operation of which is controlled by a scanning line (G1) to read out the potential of a pixel electrode to a signal line (S1). The transistor (TFT1) having a source or drain connected to the pixel electrode is a TFT having an LDD structure on a high-potential side, a TFT having LDD structures on the high- and low-potential sides in which the LDD length is larger on the high-potential side, or a TFT having a double-gate structure. When the image detection device includes a protective diode (TFT2) for, if the potential of the pixel electrode reaches a predetermined value or more, flowing pixel charges to a bias line (B1) to prevent destruction of the pixel electrode, the transistor (TFT2) has an LDD structure on at least a high-potential side or a double-gate structure. This arrangement can increase the OFF resistance to suppress the leakage current, and can prevent a decrease in S/N ratio owing to leakage of signal charges before a read.

Claims17

Dependent claims

An image detection device comprising:

a signal line and scanning line which run perpendicularly to each other on a substrate;
a pixel portion arranged at an intersection of said signal line and scanning line and including a photoelectric conversion film for converting incident light into a signal charge to accumulate the signal charge and a pixel electrode;
a signal detective circuit including thin film transistors controlled in operation by said scanning line to read out a potential of the pixel electrode;
and a scanning line driving circuit for driving said scanning line,
wherein a thin film transistor having a source or drain connected to the pixel electrode out of the thin film transistors included in said signal detective circuit has an LDD structure on a high-potential side solely,
wherein pluralities of signal lines and scanning lines run on the substrate, pixel portions are arranged in a matrix at intersections of said signal lines and scanning lines, said signal detective circuit includes thin film transistors controlled in operation by the respective scanning lines to read out potentials of corresponding pixel electrodes, and at least one thin film transistor having a source or drain connected to said pixel electrode out of the thin film transistors included in said signal detective circuit has an LDD structure on a high-potential side,
wherein said signal detective circuit comprises:
a signal read transistor which has a drain or source connected to the pixel electrode, a source or drain connected to said signal line, and a gate connected to said scanning line, and is controlled in operation by said scanning line to output the potential of the pixel electrode to said signal line;
and
a protective transistor which has a drain or source and a gate connected to the pixel electrode, and a source or drain connected to a predetermined potential line, and connects the pixel electrode to the predetermined potential line when the potential of the pixel electrode reaches not less than a predetermined potential,
said signal read transistor having an LDD structure on a high-potential side, and said protective transistor having an LDD structure on at least a high-potential side.

8 more elements

An image detection device comprising:

a signal line and scanning line which run perpendicularly to each other on a substrate;
a pixel portion arranged at an intersection of said signal line and scanning line and including a photoelectric conversion film for converting incident light into a signal charge to accumulate the signal charge and a pixel electrode;
a signal detective circuit including thin film transistors controlled in operation by said scanning line to read out a potential of the pixel electrode;
and a scanning line driving circuit for driving said scanning line,
wherein a thin film transistor having a source or drain connected to the pixel electrode out of the thin film transistors included in said signal detective circuit has a multi-gate structure,
wherein pluralities of signal lines and scanning lines run on the substrate, pixel portions are arranged in a matrix at intersections of said signal lines and scanning lines, said signal detective circuit includes thin film transistors controlled in operation by the respective scanning lines to read out potentials of corresponding pixel electrodes, and at least one thin film transistor having a source or drain connected to said pixel electrode out of the thin film transistors included in said signal detective circuit has a multi-gate structure,
wherein said signal detective circuit comprises:
a signal read transistor which has a drain or source connected to the pixel electrode, a source or drain connected to said signal line, and a gate connected to said scanning line, and is controlled in operation by said scanning line to output the potential of the pixel electrode to said signal line;
and
a protective transistor which has a drain or source and a gate connected to the pixel electrode, and a source or drain connected to a predetermined potential line, and connects the pixel electrode to the predetermined potential line when the potential of the pixel electrode reaches not less than a predetermined potential,
said signal read transistor and protective transistor having a multi-gate structure.

8 more elements

An image detection device comprising:

a signal line and scanning line which run perpendicularly to each other on a substrate;
a pixel portion arranged at an intersection of said signal line and scanning line and including a photoelectric conversion film for converting incident light into a signal charge to accumulate the signal charge and a pixel electrode;
a signal detective circuit including thin film transistors controlled in operation by said scanning line to read out a potential of the pixel electrode;
and a scanning line driving circuit for driving said scanning line,
wherein a thin film transistor having a source or drain connected to the pixel electrode out of the thin film transistors included in said signal detective circuit has LDD structures on high- and low-potential sides in which an LDD length is larger on the high-potential side than the low-potential side,
wherein pluralities of signal lines and scanning lines run on the substrate, pixel portions are arranged in a matrix at intersections of said signal lines and scanning lines, said signal detective circuit includes thin film transistors controlled in operation by the respective scanning lines to read out potentials of corresponding pixel electrodes, and at least one thin film transistor having a source or drain connected to said pixel electrode out of the thin film transistors included in said signal detective circuit has LDD structures on high- and low-potential sides in which the LDD length is larger on the high-potential side than the low-potential side,
wherein said signal detective circuit comprises:
a signal read transistor which has a drain or source connected to the pixel electrode, a source or drain connected to said signal line, and a gate connected to said scanning line, and is controlled in operation by said scanning line to output the potential of the pixel electrode to said signal line;
and
a protective transistor which has a drain or source and a gate connected to the pixel electrode, and a source or drain connected to a predetermined potential line, and connects the pixel electrode to the predetermined potential line when the potential of the pixel electrode reaches not less than a predetermined potential,
said signal read transistor and protective transistor having LDD structures on high- and low-potential sides in which an LDD length is larger on the high-potential side than the low-potential side.

8 more elements

An image detection device comprising:

a signal line and scanning line which run perpendicularly to each other on a substrate;
a pixel portion arranged at an intersection of said signal line and scanning line and including a photoelectric conversion film for converting incident light into a signal charge to accumulate the signal charge and a pixel electrode;
a signal detective circuit including thin film transistors controlled in operation by said scanning line to read out a potential of the pixel electrode;
and
a scanning line driving circuit for driving said scanning line,
wherein a thin film transistor having a source or drain connected to the pixel electrode out of the thin film transistors included in said signal detective circuit has a multi-gate structure, and
wherein said signal detective circuit comprises:
a signal read transistor which has a drain or source connected to the pixel electrode, a source or drain connected to said signal line, and a gate connected to said scanning line, and is controlled in operation by said scanning line to output the potential of the pixel electrode to said signal line;
a protective transistor which has a drain or source connected to the pixel electrode, and a source or drain connected to a predetermined potential line, and connects the pixel electrode to the predetermined potential line when the potential of the pixel electrode reaches not less than a predetermined potential;
and
a threshold adjustment circuit including at least one transistor which receives a power supply voltage, has an input terminal connected to the pixel electrode and an output terminal connected to the gate of said protective transistor, and adjusts an operating threshold of said protective transistor in accordance with the potential of the pixel electrode,
said signal read transistor and protective transistor having a multi-gate structure, and the transistor included in said threshold adjustment circuit having a single-gate structure.

9 more elements

An image detection device comprising:

a signal line and scanning line which run perpendicularly to each-other on a substrate;
a pixel portion arranged at an intersection of said signal line and scanning line and including a photoelectric conversion film for converting incident light into a signal charge to accumulate the signal charge and a pixel electrode;
a signal detective circuit including thin film transistors controlled in operation by said scanning line to read out a potential of the pixel electrode;
and
a scanning line driving circuit for driving said scanning line,
wherein a thin film transistor having a source or drain connected to the pixel electrode out of the thin film transistors included in said signal detective circuit has a multi-gate structure,
wherein pluralities of signal lines and scanning lines run on the substrate, pixel portions are arranged in a matrix at intersections of said signal lines and scanning lines, said signal detective circuit includes thin film transistors controlled in operation by the respective scanning lines to read out potentials of corresponding pixel electrodes, and at least one thin film transistor having a source or drain connected to said pixel electrode out of the thin film transistors included in said signal detective circuit has a multi-gate structure, and
wherein said signal detective circuit comprises:
a signal read transistor which has a drain or source connected to the pixel electrode, a source or drain connected to said signal line, and a gate connected to said scanning line, and is controlled in operation by said scanning line to output the potential of the pixel electrode to said signal line;
a protective transistor which has a drain or source connected to the pixel electrode, and a source or drain connected to a predetermined potential line, and connects the pixel electrode to the predetermined potential line when the potential of the pixel electrode reaches not less than a predetermined potential;
and
a threshold adjustment circuit including at least one transistor which receives a power supply voltage, has an input terminal connected to the pixel electrode and an output terminal connected to the gate of said protective transistor, and adjusts an operating threshold of said protective transistor in accordance with the potential of the pixel electrode,
said signal read transistor and protective transistor having a multi-gate structure, and the transistor included in said threshold adjustment circuit having a single-gate structure.

10 more elements

An image detection device comprising:

a signal line and scanning line which run perpendicularly to each other on a substrate;
a pixel portion arranged at an intersection of said signal line and scanning line and including a photoelectric conversion film for converting incident light into a signal charge to accumulate the signal charge and a pixel electrode;
a signal detective circuit including thin film transistors controlled in operation by said scanning line to read out a potential of the pixel electrode;
and
a scanning line driving circuit for driving said scanning line,
wherein a thin film transistor having a source or drain connected to the pixel electrode out of the thin film transistors included in said signal detective circuit has LDD structures on high- and low-potential sides in which an LDD length is larger on the high-potential side than the low-potential side, and
wherein said signal detective circuit comprises:
a signal read transistor which has a drain or source connected to the pixel electrode, a source or drain connected to said signal line, and a gate connected to said scanning line, and is controlled in operation by said scanning line to output the potential of the pixel electrode to said signal line;
a protective transistor which has a drain or source connected to the pixel electrode, and a source or drain connected to a predetermined potential line, and connects the pixel electrode to the predetermined potential line when the potential of the pixel electrode reaches not less than a predetermined potential;
and
a threshold adjustment circuit including at least one transistor which receives a power supply voltage, has an input terminal connected to the pixel electrode and an output terminal connected to the gate of said protective transistor, and adjusts an operating threshold of said protective transistor in accordance with the potential of the pixel electrode,
said signal read transistor and protective transistor having LDD structures on high- and low-potential sides in which an LDD length is larger on the high-potential side than the low-potential side.

9 more elements

An image detection device comprising:

a signal line and scanning line which run perpendicularly to each other on a substrate;
a pixel portion arranged at an intersection of said signal line and scanning line and including a photoelectric conversion film for converting incident light into a signal charge to accumulate the signal charge and a pixel electrode;
a signal detective circuit including thin film transistors controlled in operation by said scanning line to read out a potential of the pixel electrode;
and
a scanning line driving circuit for driving said scanning line,
wherein a thin film transistor having a source or drain connected to the pixel electrode out of the thin film transistors included in said signal detective circuit has a multi-gate structure,
wherein pluralities of signal lines and scanning lines run on the substrate, pixel portions are arranged in a matrix at intersections of said signal lines and scanning lines, said signal detective circuit includes thin film transistors controlled in operation by the respective scanning lines to read out potentials of corresponding pixel electrodes, and at least one thin film transistor having a source or drain connected to said pixel electrode out of the thin film transistors included in said signal detective circuit has a multi-gate structure, and
wherein said signal detective circuit comprises:
a protective transistor which has a drain or source and gate connected to the pixel electrode, and a source or drain connected to a first predetermined potential terminal, and connects the pixel electrode to the first predetermined potential terminal when the potential of the pixel electrode reaches not less than a predetermined potential;
a reset transistor which has a drain or source connected to the pixel electrode, and a source or drain connected to a second predetermined potential terminal, and connects the pixel electrode to the second predetermined potential terminal when a gate receives a reset signal;
and
a voltage conversion circuit including at least one transistor which receives a power supply voltage, has an input terminal connected to the pixel electrode and an output terminal connected to said signal line, and generates a voltage signal corresponding to the potential of the pixel electrode to output the voltage signal to said signal line,
said protective transistor and reset transistor having a multi-gate structure, and the transistor included in said voltage conversion circuit having a single-gate structure.

10 more elements

An image detection device comprising:

a signal line and scanning line which run perpendicularly to each other on a substrate;
a pixel portion arranged at an intersection of said signal line and scanning line and including a photoelectric conversion film for converting incident light into a signal charge to accumulate the signal charge and a pixel electrode;
a signal detective circuit including thin film transistors controlled in operation by said scanning line to read out a potential of the pixel electrode;
and
a scanning line driving circuit for driving said scanning line,
wherein a thin film transistor having a source or drain connected to the pixel electrode out of the thin film transistors included in said signal detective circuit has LDD structures on high- and low-potential sides in which an LDD length is larger on the high-potential side than the low-potential side, and
wherein said signal detective circuit comprises:
a protective transistor which has a drain or source and gate connected to the pixel electrode, and a source or drain connected to a first predetermined potential terminal, and connects the pixel electrode to the first predetermined potential terminal when the potential of the pixel electrode reaches not less than a predetermined potential;
a reset transistor which has a drain or source connected to the pixel electrode, and a source or drain connected to a second predetermined potential terminal, and connects the pixel electrode to the second predetermined potential terminal when a gate receives a reset signal;
and
a voltage conversion circuit including at least one transistor which receives a power supply voltage, has an input terminal connected to the pixel electrode and an output terminal connected to said signal line, and generates a voltage signal corresponding to the potential of the pixel electrode to output the voltage signal to said signal line,
said protective transistor and reset transistor having LDD structures on high- and low-potential sides in which an LDD length is larger on the high-potential side than the low-potential side.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application: 09/337,524Filed 22 Jun 1999
Priority: JP 10/17501522 Jun 1998
Granted: 30 Mar 2004
Term ends: Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10D 86/40
Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless…
H10D 30/6715
Characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes: characterised by the doping profiles, e.g.…
H10D 30/6717
Characterised by the doping profiles, e.g. having lightly-doped source or drain extensions: the source and the drain regions being asymmetrical
H10D 30/6733
Characterised by the shapes, relative sizes or dispositions of the gate electrodes: multi-gate TFTs

Family

No related US applications are recorded in the indexed filing history.

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