Method of producing silica micro-structures from x-ray lithography of SOG materials
AssigneeLouisiana Tech University Foundation, Inc.
InventorsVijay-Anandh Shanmugam, Michael J. Vasile, Philip J. Coane
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Abstract
A lithographic method for producing high aspect ratio silica micro-structures having the steps of: providing a carrier substrate with a confinement boundary placed on the carrier substrate; placing the SOG material within the confinement boundary and soft baking at a temperature above its glass transition temperature; forming a pattern of interest on the soft baked SOG material by x-ray lithography; and heating the SOG material until it is substantially converted to a silica-like oxide.
Claims22
A lithographic method of producing silica micro structures comprising the steps of:
- a. providing a carrier substrate with a confinement boundary on said carrier substrate;
- b. placing a SOG material within said confinement boundary;
- c. removing solvents from said SOG material in order to obtain a hardened SOG film;
- and
- d. forming a pattern of interest on said hardened SOG film through x-ray lithography.
A method of producing a hardened organosilicon film comprising the steps of:
- a. providing a carrier substrate and a SOG material have approximately the same coefficient of thermal expansion;
- b. placing a confinement boundary having a height of at least 25 microns on said carrier substrate;
- c. placing said SOG material within said confinement boundary;
- and
- d. removing solvents from said SOG material to obtain a hardened organosilicon film.
Dependencies are inferred from the claim text.