Method for manufacturing semiconductor device
AssigneeHitachi, Ltd.
InventorsKenetsu Yokogawa, Yoshinori Momonoi, Kazunori Tsujimoto, Shinichi Tachi
Life of this patent
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Abstract
Disclosed is a method for manufacturing a semiconductor device which efficiently carries out a process on a semiconductor substrate, such as dry etching, and cleaning for removing a foreign matter after the process. The method includes a step of removing a foreign matter by using both an electric action of a plasma generated by plasma generation means and a physical action caused by a frictional stress of a fast gas stream formed by a pad structure which is arranged close to a wafer surface.
Claims14
A method for dry cleaning a semiconductor device, comprising:
- (1) a step of forming a first film on a major surface of a substrate in a pattern;
- (2) a step of placing said substrate having said patterned first film in a process chamber;
- and
- (3) a step of placing above said major surface of said substrate, a pad structure having major surface opposing to said major surface of said substrate and having a gas ejection section provided on said major surface of the pad structure, and ejecting a cleaning gas from a gas ejection section in a depressurized state in said process chamber;
- (4) a step of controlling distance between said major surface of said substrate and said major surface of the pad structure thereby gearing a gas pressure therebetween to a desired gas pressure;
- and
- (5) a step of moving said major surface of the pad structure relatively in parallel with said major surface of said substrate.
A method for manufacturing a semiconductor device, comprising:
- (1) a step of forming an insulating film on a major surface of a semiconductor substrate;
- (2) a step of forming at least one through hole in said insulating film by dry etching;
- (3) a step of placing said semiconductor substrate having said hole-formed insulating film in a process chamber;
- and
- (4) a step of keeping inside said process chamber in a depressurized state, placing, above said major surface of said substrate, a pad structure having a major surface opposing to said major surface of said substrate, and having a gas ejection section provided on said major surface of said pad structure, and ejecting a cleaning gas from said gas ejection section
- (5) a step of controlling a distance between said major surface of said substrate and said major surface of the pad structure by detecting a force acting therebetween to a desired gas pressure;
- and
- (6) a step of cleaning said hole-formed insulating film on said major surface of said semiconductor substrate by moving said major surface of the pad structure relatively in parallel with said major surface of said substrate.
A method for manufacturing a semiconductor device, comprising:
- a step of forming a film having a pattern on a major surface of a semiconductor substrate;
- a step of placing said semiconductor substrate in a process chamber;
- a step of maintaining inside of said process chamber in a depressurized sate, and supplying an etching gas into said process chamber to thereby form a plasma environment;
- and
- a step of placing, above said major surface of said substrate, a pad structure having a major surface opposing to said major surface of said substrate and having a gas ejection section provided on said major surface of said pad structure, and ejecting a cleaning gas from said gas ejection section;
- a step of controlling a distance between said major surface of said substrate and said major surface of the pad structure thereby gearing a gas pressure therebetween to a desired gas pressure, and
- a step of moving said major surface of the pad structure relatively in parallel with said major surface of said substrate.
A method for manufacturing a semiconductor device, comprising:
- (1) a step of loading a semiconductor wafer into a process chamber;
- (2) a step of performing a plasma process on a major surface of said semiconductor wafer and performing a cleaning process on said major surface with a gas stream;
- and
- (3) a step of unloading said semiconductor wafer from said process chamber.
Dependencies are inferred from the claim text.