Physical vapor deposition targets
AssigneeHoneywell International Inc.
InventorsWuwen Yi, Diana Morales, Chi Tse Wu, Ritesh P. Shah, Jeff A. Keller
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Abstract
The invention includes a non-magnetic physical vapor deposition target. The target has at least 30 atom percent total of one or more of Co, Ni, Ta, Ti, Pt, Mo and W, and at least 10 atom percent silicon. The target also has one phase and not more than 1% of any additional phases other than said one phase. In another aspect, the invention includes a non-magnetic physical vapor deposition target consisting essentially of Co and/or Ni, silicon, and one phase.
Claims24
A physical vapor deposition target, comprising:
- at least 30 atom percent cobalt;
- at least 10 atom percent silicon;
- and
- one phase comprising cobalt, and not more than 1% of any additional phases comprising cobalt other than said one phase.
A physical vapor deposition target, comprising:
- at least 30 atom percent nickel;
- at least 10 atom percent silicon;
- and
- one phase comprising nickel, and not more than 1% of any additional phases comprising nickel other than said one phase.
A physical vapor deposition target, comprising:
- at least 30 atom percent total of one or more of Co, Ni, Ta, Ti, Pt, and Mo;
- at least 10 atom percent silicon;
- one phase comprising the one or more of Co, Ni, Ta, Ti, Pt, and Mo and not more than 1% of any additional phases comprising the one or more of Co, Ni, Ta, Ti, Pt, and Mo other than said one phase;
- and
- wherein the target is non-magnetic.
A physical vapor deposition target, comprising:
- at least 20 atom percent total of W;
- at least 10 atom percent silicon;
- one phase comprising WSi2 and not more than 1% of any additional phases other than said one phase;
- and
- wherein the target is non-magnetic.
Dependencies are inferred from the claim text.