Barrier layer deposition using HDP-CVD
AssigneeApplied Materials, Inc.
InventorsHichem M'Saad, Seon Mee Cho, Dana Tribula
Life of this patent
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Abstract
A method is provided for depositing a barrier layer on a substrate using a gaseous mixture that includes a hydrocarbon-containing gas and a silicon-containing gas. The gaseous mixture is provided to a process chamber and is used to form a plasma for depositing the barrier layer. The barrier layer is deposited with a thickness less than 500 Å. Suitable hydrocarbon-containing gases include alkanes and suitable silicon-containing gases include silanes.
Claims21
A method for depositing a barrier layer over a substrate disposed in a process chamber, the method comprising:
- flowing a gaseous mixture into the process chamber, the gaseous mixture comprising a silicon-containing gas and a hydrocarbon-containing gas;
- generating a plasma from the gaseous mixture;
- and
- depositing the barrier layer with a thickness less than 500 Å over the substrate with the plasma, the barrier layer including silicon, carbon, and hydrogen, with the hydrogen incorporated into the barrier layer in a concentration less than about 50 at. % and the carbon and silicon incorporated into the barrier layer in an atomic ratio of carbon to silicon C:Si between about 55:45 and 65:35.
A computer-readable storage medium having a computer-readable program embodied therein for directing operation of a substrate processing system including a process chamber, a plasma-generation system, a gas-delivery system configured to introduce gases into the process chamber, the computer-readable program including instructions for operating the substrate-processing system to deposit a barrier layer over a substrate disposed in the process chamber in accordance with the following:
- flowing a gaseous mixture into the process chamber with the gas-delivery system, the gaseous mixture comprising a silicon-containing gas and a hydrocarbon-containing gas;
- generating a plasma from the gaseous mixture with the plasma-generation system;
- and
- depositing the barrier layer with a thickness less than 500 Å over the substrate with the plasma, the barrier layer including silicon, carbon, and hydrogen, with the hydrogen incorporated into the barrier layer in a concentration less than about 50 at. % and the carbon and silicon incorporated into the barrier layer in an atomic ratio of carbon to silicon C:Si between about 55:45 and 65:35.
A substrate-processing system comprising:
- a housing defining a process chamber;
- a plasma-generating system coupled to the processing chamber;
- a gas-delivery system configured to introduce gases into the process chamber;
- a controller for controlling the gas-delivery system and the plasma generating system;
- and
- a memory coupled to the controller comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of the substrate-processing system, the computer-readable program including:
- instructions for directing the gas-delivery system to flow a gaseous mixture into the process chamber, the gaseous mixture comprising a silicon-containing gas and a hydrocarbon-containing gas;
- and
- instructions for directing the plasma-generating system to generate a plasma from the gaseous mixture to deposit the barrier layer with a thickness less than 500 Å over the substrate, the barrier layer including silicon, carbon, and hydrogen, with the hydrogen incorporated into the barrier layer in a concentration less than about 50 at. % and the carbon and silicon incorporated into the barrier layer in an atomic ratio of carbon to silicon C:Si between about 55:45 and 65:35.
Dependencies are inferred from the claim text.