Method for forming contact plug in semiconductor device
AssigneeHynix Semiconductor Inc.
InventorCheong Woo-Seock
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Abstract
The present invention provides a method for forming a contact plug in a semiconductor device capable of preventing a decrease of contact resistance and degradation of device properties due to external diffusions of boron. There suggested two different approaches to suppress regenerations of a native oxide layer so to minimize the contact resistance and to suppress the external diffusions of boron. The first approach includes the steps of forming a contact hole by etching an insulating (BPSG) layer containing boron and phosphorus and subsequently cleaning with a hydrogen-rapid thermal process (H2-RTP) as flowing PH3 gas containing phosphorus. Another approach includes the step of cleaning with the H2-RTP and simultaneously flowing HCl gas from a peak temperature of the H2-RTP.
Claims12
A method for forming a contact plug in a semiconductor device, comprising the steps of:
- forming a contact hole by etching an insulating layer on a substrate;
- cleaning the contact hole by employing a hydrogen-rapid thermal process (H2-RTP) with flowing a gas containing phosphorus;
- and
- filling the contact hole with a silicon layer.
A method forming a contact plug in a semiconductor device, comprising the steps of:
- forming a contact hole by etching an insulating layer on a substrate;
- cleaning the contact hole with a hydrogen-rapid thermal process (H2-RTP) and simultaneously flowing HCl gas from a peak temperature of the H2-RTP;
- and
- forming a silicon thin layer on the substrate until filling the cleaned contact hole.
Dependencies are inferred from the claim text.