Semiconductor device manufacturing method

A semiconductor device manufacturing method comprising the steps of:

• exposing a surface of a copper (Cu) wiring layer formed over a semiconductor substrate to a plasma of a gas selected from the group consisting of an ammonia gas, a mixed gas of nitrogen and hydrogen, a CF4 gas, a C2F6 gas and a NF3 gas;
• exposing the surface of the copper (Cu) wiring layer to an atmosphere or a plasma of a gas selected from the group consisting of an ammonia gas, an ethylenediamine gas, β-diketone gas, a mixed gas consisting of the ammonia gas and a hydrocarbon gas (CxHy), and a mixed gas consisting of a nitrogen gas and the hydrocarbon gas (CxHy);
• and
• forming a Cu diffusion preventing insulating film on the copper (Cu) wiring layer.

A semiconductor device manufacturing method comprising the steps of:

• exposing a surface of a copper (Cu) wiring layer formed over a semiconductor substrate to a plasma of an ammonia gas;
• forming a silicon-containing insulating film on the copper (Cu) wiring layer;
• and
• exposing the silicon-containing insulating film to an atmosphere or a plasma selected from the group consisting of an atmosphere or a plasma of a mixed gas consisting of an ammonia gas and a hydrocarbon gas (CxHy), an atmosphere or a plasma of a mixed gas consisting of a nitrogen gas and the hydrocarbon gas (CxHy), a plasma of the nitrogen gas, and an atmosphere of the ammonia gas.

A semiconductor device manufacturing method comprising the steps of:

• exposing a surface of a copper (Cu) wiring layer formed over a semiconductor substrate to a plasma of an ammonia gas;
• forming a silicon-containing insulating film on the copper (Cu) wiring layer;
• and
• exposing the silicon-containing insulating film to an atmosphere or a plasma of an ammonia gas or a plasma of a nitrogen gas, and then exposing the silicon-containing insulating film to an atmosphere or a plasma of a hydrocarbon gas (CxHy).

A semiconductor device manufacturing method comprising the steps of:

• exposing a surface of a copper (Cu) wiring layer formed over a semiconductor substrate to a plasma of an ammonia gas;
• forming a silicon-containing insulating film on the copper (Cu) wiring layer;
• and
• exposing the silicon-containing insulating film to an atmosphere or a plasma of a hydrocarbon gas (CxHy), and then exposing the silicon-containing insulating film to an atmosphere or a plasma of an ammonia gas or a plasma of a nitrogen gas.