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US 6,713,373 B1Granted
Method for obtaining adhesion for device manufacture
AssigneeNovellus Systems, Inc.
InventorThomas R. Omstead
Life of this patent
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Abstract
A method of conductive copper lines in a semiconductor device is provided. A dielectric structure having a surface with recessed features formed therein is provided. A ruthenium oxide layer is deposited over the surface of the dielectric structure. A ruthenium oxide and metallic ruthenium bilayer is formed from the ruthenium oxide layer. Copper conductive lines are formed in the recessed features.
Claims1
A method of forming conductive copper lines in a semiconductor device, the method comprising:
- (a) providing a dielectric structure having a surface with recessed features formed therein;
- (b) depositing a ruthenium oxide layer over the surface of the dielectric structure;
- (c) forming a bilayer of ruthenium oxide and metallic ruthenium from the ruthenium oxide layer, comprising depositing a layer of metallic ruthenium on the ruthenium oxide layer;
- and
- (d) forming copper conductive lines in the recessed features.
2 more elements
Dependencies are inferred from the claim text.