Semiconductor device and method of manufacturing the same including raised source/drain comprising SiGe or SiC

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a gate insulating film and a gate electrode on a main surface of a silicon semiconductor substrate;
• selectively carbonizing only the exposed region of the main surface of the semiconductor substrate to selectively form a silicon carbide film on the exposed region, after formation of the gate electrode;
• depositing a silicon film on said silicon carbide film of said region;
• and
• forming source/drain regions by implanting and diffusing an impurity into the main surface of said semiconductor substrate through said silicon carbide film and said silicon film deposited on the silicon carbide film with the gate electrode used as a mask, said silicon film deposited on said silicon carbide film is a single crystalline film having a dislocation density of at least 108cm−2.