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US 6,713,330 B1Granted
Method of fabricating a thin film transistor
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHongyong Zhang, Satoshi Teramoto
Life of this patent
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Abstract
Method of fabricating TFTs starts with forming a nickel film selectively on a bottom layer which is formed on a substrate. An amorphous silicon film is formed on the nickel film and heated to crystallize it. The crystallized film is irradiated with infrared light to anneal it. Thus, a crystalline silicon film having excellent crystallinity is obtained. TFTs are built, using this crystalline silicon film.
Claims26
A method of manufacturing a display device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon over a substrate;
- providing said semiconductor film with a crystallization promoting material;
- crystallizing said semiconductor film provided with said crystallization promoting material by heating;
- irradiating said crystallized semiconductor film with a light comprising an infrared light to further crystallize said crystallized semiconductor film;
- etching said crystallized semiconductor film into semiconductor layers after said irradiating step;
- introducing an impurity element into selected portions of said semiconductor layers;
- and
- activating said impurity element in said selected portions of said semiconductor layers.
5 more elements
A method of manufacturing a display device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon over a substrate;
- providing said semiconductor film with a crystallization promoting material;
- crystallizing said semiconductor film provided with said crystallization promoting material by heating;
- irradiating said crystallized semiconductor film with a light comprising an infrared light to further crystallize said crystallized semiconductor film;
- etching said crystallized semiconductor film into semiconductor layers after said crystallizing step;
- forming gate electrodes adjacent to said semiconductor layers with a gate insulating film interposed therebetween;
- introducing an impurity element into selected portions of said semiconductor layers using said gate electrodes as a mask;
- and
- activating said impurity element in said selected portions of said semiconductor layers.
6 more elements
A method of manufacturing a display device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon over a substrate;
- providing said semiconductor film with a crystallization promoting material;
- crystallizing said semiconductor film provided with said crystallization promoting material, whereby a semiconductor film having a first crystallinity is obtained;
- irradiating said semiconductor film with a light after said crystallizing step, whereby a semiconductor film having a second crystallinity is obtained,
- wherein said second crystallinity is more enhanced than said first crystallinity;
- etching said semiconductor film into semiconductor layers after said irradiating step;
- introducing an impurity element into selected portions of said semiconductor layers;
- and
- activating said impurity element in said selected portions of said semiconductor layers.
6 more elements
A method of manufacturing a display device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon over a substrate;
- providing said semiconductor film with a crystallization promoting material;
- crystallizing said semiconductor film provided with said crystallization promoting material, whereby a semiconductor film having a first crystallinity is obtained;
- irradiating said semiconductor film with a light from a lamp after said crystallizing step, whereby a semiconductor film having a second crystallinity is obtained,
- wherein said second crystallinity is more enhanced than said first crystallinity;
- etching said semiconductor film into semiconductor layers after said irradiating step;
- introducing an impurity element into selected portions of said semiconductor layers;
- and
- activating said impurity element in said selected portions of said semiconductor layers.
6 more elements
A method of manufacturing a display device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon over a substrate;
- providing said semiconductor film with a crystallization promoting material;
- crystallizing said semiconductor film provided with said crystallization promoting material, whereby a semiconductor film having a first crystallinity is obtained;
- irradiating said semiconductor film with an infrared light after said crystallizing step, whereby a semiconductor film having a second crystallinity is obtained,
- wherein said second crystallinity is more enhanced than said first crystallinity;
- etching said semiconductor film into semiconductor layers after said irradiating step;
- introducing an impurity element into selected portions of said semiconductor layers;
- and
- activating said impurity element in said selected portions of said semiconductor layers.
6 more elements
Dependencies are inferred from the claim text.