Manufacturing method of thin film transistor panel

A method for manufacturing a thin film transistor panel, comprising at least the following steps:

• providing a silicon substrate;
• forming a transparent insulator on a front surface of said silicon substrate;
• forming a plurality of thin film transistor structures on said transparent insulator;
• bonding a transparent substrate onto the front surface of said silicon substrate;
• removing said silicon substrate by chemical mechanical polishing or an etching process;
• and
• forming a plurality of transparent electrodes corresponding to said plurality of thin film transistor structures on a bottom surface of said transparent insulator.

A method for manufacturing thin film transistor panel, comprising at least the following steps:

• providing a silicon substrate;
• bonding a transparent substrate onto a back surface of said silicon substrate;
• reducing the thickness of said silicon substrate to form a layer of crystal silicon thin film;
• forming a plurality of thin film transistor structures on said crystal silicon thin film;
• etching said thin film transistor structures and said crystal silicon thin film to form a suitable pixel via;
• forming a planarization layer on said thin film transistor structures and said pixel via;
• and
• forming a plurality of transparent electrodes corresponding to the thin film transistor structures on said planarization layer,
• wherein the step of forming said thin film transistor structures further comprises:
• forming a source region and a drain region on said crystal silicon thin film;
• forming a gate insulator on said crystal silicon thin film;
• forming a gate electrode on said gate insulator;
• forming an interlayer on said gate electrode and said gate insulator;
• and
• forming a metal contact layer on said interlayer.