Semiconductor device and method of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Osamu Nakamura, Takashi Hamada, Satoshi Murakami
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Abstract
A semiconductor device is manufactured by a method in which the number of heat treatments at a high temperature (600° C. or higher) is reduced to thereby achieve a process at a low temperature (600° C. or lower), and a simplified process and improvement in throughput are realized. An impurity region to which a rare gas element (also called a rare gas) is added is formed on a semiconductor film of a crystalline structure by using a mask. Gettering is performed in such a manner that a metallic element contained in the semiconductor film is caused to segregate in the impurity region by heat treatment. The impurity region is thereafter used as a source or drain region.
Claims45
A method of manufacturing a semiconductor device having a pixel portion and a driver circuit provided on an insulating surface, comprising the steps of:
- adding a metal element to a semiconductor film comprising amorphous silicon over a substrate;
- crystallizing the semiconductor film added with the metal element;
- forming an insulating film on the semiconductor film;
- forming an electrode having a tapered portion on the insulating film so that the electrode overlaps the semiconductor film;
- forming a first impurity region by selectively adding an impurity element imparting one conductivity type to the semiconductor film through the tapered portion of the electrode;
- selectively forming a second impurity region containing the impurity element imparting one conductivity type and a rare gas element in the semiconductor film in the pixel portion by providing a mask, and simultaneously forming the second impurity region in the driver circuit by using the electrode as a mask in a self-alignment manner;
- and
- selectively removing or reducing the metal element in the semiconductor film having the crystalline structure by gettering the metal element into the second impurity region.
A method of manufacturing a semiconductor device comprising the steps of:
- adding a metal element to a semiconductor film comprising amorphous silicon over a substrate;
- crystallizing the semiconductor film added with the metal element;
- forming an insulating film on the semiconductor film;
- forming an electrode on the insulating film;
- forming a first impurity region by selectively adding an impurity element imparting one conductivity type to the semiconductor film;
- forming a second impurity region containing the impurity element imparting one conductivity type and a rare gas element adjacent to the first impurity region;
- and
- selectively removing or reducing the metal element in the semiconductor film having the crystalline structure by gettering the metal element into the second impurity region.
A method of manufacturing a semiconductor device comprising the steps of:
- adding a metal element to a semiconductor film comprising amorphous silicon over a substrate;
- crystallizing the semiconductor film added with the metal element;
- forming an insulating film on the semiconductor film;
- forming an electrode having a tapered portion on the insulating film;
- forming a first impurity region by selectively adding an impurity element imparting one conductivity type to the semiconductor film;
- forming a second impurity region containing the impurity element imparting one conductivity type and a rare gas element adjacent to the first impurity region;
- and
- selectively removing or reducing the metal element in the semiconductor film having the crystalline structure by gettering the metal element into the second impurity region.
A method of manufacturing a semiconductor device comprising the steps of:
- adding a metal element to a semiconductor film comprising amorphous silicon over a substrate;
- crystallizing the semiconductor film added with the metal element;
- forming an insulating film on the semiconductor film;
- forming an electrode on the insulating film;
- forming a first impurity region by selectively adding an impurity element imparting one conductivity type and a rare gas element to the semiconductor film;
- forming a second impurity region containing the impurity element imparting one conductivity type between a channel region and the first impurity region;
- and
- selectively removing or reducing the metal element in the semiconductor film having the crystalline structure by gettering the metal element into the first impurity region.
A method of manufacturing a semiconductor device comprising the steps of:
- adding a metal element to a semiconductor film comprising amorphous silicon over a substrate;
- crystallizing the semiconductor film added with the metal element;
- forming an insulating film on the semiconductor film;
- forming an electrode having a tapered portion on the insulating film;
- forming a first impurity region by selectively adding an impurity element imparting one conductivity type and a rare gas element to the semiconductor film;
- forming a second impurity region containing the impurity element imparting one conductivity type between a channel region and the first impurity region;
- and
- selectively removing or reducing the metal element in the semiconductor film having the crystalline structure by gettering the metal element into the first impurity region.
Dependencies are inferred from the claim text.