Method for fabricating thin-film substrate and thin-film substrate fabricated by the method
AssigneeCitizen Watch Co., Ltd.
InventorsMasafumi Ide, Toshiyuki Sameshima
Life of this patent
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Abstract
Supports (3) are formed to be arrayed on a support base (1), a sacrifice layer (15) is formed of a resin material, and the sacrifice layer (15) is planarized so as to expose the top of the respective supports (3), thereby forming a thin-film substrate (5) on top of the sacrifice layer (15) as planarized, and the supports (3). The sacrifice layer (15) is removed by plasma selective etching thereof through the intermediary of the thin-film substrate, and thereby a large-area thin-film substrate (5) floatingly spaced by a space (7) away from the support base (1) can be fabricated.
Claims19
A method for fabricating a thin-film substrate, wherein the thin-film substrate is fabricated on top of supports arrayed on a support base so as to be spaced away from the support base, said method comprising steps of:
- forming the supports of an electrically conductive material in a predetermined shape on the support base;
- forming a sacrifice layer made of a resin material on the support base;
- planarizing the sacrifice layer so as to expose top of the respective supports;
- forming the thin-film substrate of an insulating material containing tantalum oxide or silicon oxide as main constituent thereof on top of the sacrifice layer as planarized;
- and
- removing the sacrifice layer by plasma selective etching based on a reactive gas containing oxygen or oxygen atoms with a total pressure in a range of 100 Pa to 1500 Pa through intermediary of the thin-film substrate.
A method for fabricating a thin-film substrate, wherein the thin-film substrate is fabricated on top of supports arrayed on a support base so as to be spaced away from the support base, said method comprising steps of:
- forming a metal film on the support base by sputtering method;
- forming the supports in a predetermined shape by applying photolithography and etching treatment to the metal film;
- forming a sacrifice layer by applying a resin material containing acrylic resin as main constituent thereof onto the support base by means of spin coater method;
- planarizing the sacrifice layer by etching back the same through a plasma treatment thereof so as to expose top of the respective supports;
- forming the thin-film substrate made of an insulating material containing tantalum oxide or silicon oxide as main constituent thereof on top of the sacrifice layer as planarized;
- and
- removing the sacrifice layer by plasma selective etching based on a reactive gas containing oxygen or oxygen atoms with a total pressure in a range of 100 Pa to 1500 Pa through intermediary of the thin-film substrate.
A method for fabricating a thin-film substrate, wherein the thin-film substrate is fabricated on top of supports arrayed on a support base so as to be spaced away from the support base, said method comprising steps of:
- forming the supports of an electrically conductive material in a predetermined shape on the support base;
- forming a sacrifice layer made of a resin material on the support base;
- planarizing the sacrifice layer so as to expose top of the respective supports;
- forming a porous film on the sacrifice layer as planarized by depositing silicon dioxide by oblique angle vapor deposition treatment;
- removing the sacrifice layer by plasma selective etching based on a reactive gas containing oxygen or oxygen atoms with a total pressure in a range of 100 Pa to 1500 Pa through intermediary of the porous film;
- and
- subsequently forming the thin-film substrate of an insulating material on top of the porous film.
Dependencies are inferred from the claim text.