Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD

A method of forming a silicon oxynitride film including:

• placing a substrate in a deposition chamber and obtaining a desired process temperature and a desired process pressure;
• flowing an oxidation source gas into said deposition chamber at a first desired flow rate for a first predetermined amount of time after said desired process temperature and said desired process pressure are obtained;
• diverting a silicon source gas away from said deposition chamber, said diverting having said silicon source gas flow at a second desired flow rate and said diverting occurring before forming said silicon oxynitride film;
• stopping said diverting and flowing said silicon source gas at said second desired flow rate into said deposition chamber;
• decomposing said silicon source gas and said oxidation source gas in said deposition chamber using a thermal energy source;
• forming said silicon oxynitride film above said substrate wherein said desired process pressure is between of 50 to 350 Torr, wherein said desired process temperature is between 400° to 800° C., and wherein a flow ratio for said silicon source gas and said oxidation source gas is between 1:50 to 1:10000;
• wherein said silicon source gas is mixed with a nitridation source gas;
• terminating said silicon source gas into said deposition chamber while maintaining said flowing of said oxidation source gas in said deposition chamber for a second predetermined amount of time;
• and
• purging said deposition chamber with a cleaning gas.