Mask for evaluating selective epitaxial growth process

Abstract

Disclosed is a mask for evaluating selective epitaxial growth process. The disclosed mask comprises a mask pattern for resistance measurement to measure sheet resistance of grown single crystal silicon in a first area, a mask pattern for selectivity evaluation to evaluate selectivity of single crystal silicon growth in a second area diagonal to the first area, mask patterns for facet generation evaluation, having different shapes, to evaluate facet generation of grown single crystal silicon in a third area, mask patterns for loading effect evaluation, having different shapes, to evaluate growth of single crystal silicon by loading effect in the upper part of a fourth area and a mask pattern for uniformity evaluation to evaluate uniformity of grown single crystal silicon in the lower part of the pattern for loading effect evaluation in the fourth area.

Dependencies are inferred from the claim text.