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US 6,712,284 B2Granted
High frequency semiconductor device
AssigneeFujitsu Quantum Devices Limited
InventorsYoshio Aoki, Yutaka Mimino, Osamu Baba, Muneharu Gotoh
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Abstract
In a high frequency semiconductor device, a shield plate which is connected to the ground potential is provided above an MMIC structure including line conductors, with an insulating interlayer provided therebetween. By using the shield plate to shield the MMIC, interference caused by external electromagnetic waves or leakage of electromagnetic waves to the exterior can be reduced in a chip alone.
Claims20
A high frequency semiconductor device comprising:
- a semiconductor substrate;
- at least one active element formed on said semiconductor substrate;
- a ground plate connected to a ground potential, said ground plate being provided on said semiconductor substrate;
- at least one insulating interlayer;
- a plurality of line conductors provided on said ground plate, with said at least one insulating interlayer provided therebetween;
- the plurality of line conductors individually acting as a microstrip line combining with said around plate;
- at least one terminal for connecting to the exterior;
- and
- a shield plate provided on a highest layer of the plurality of line conductors, with said at least one insulating interlayer provided therebetween, said shield plate being connected to the ground potential and substantially covering the entirety of said semiconductor substrate except for an area of said at least one terminal.
6 more elements
A high frequency semiconductor device comprising:
- a semiconductor substrate;
- a ground plate connected to a ground potential;
- at least one insulating interlayer;
- a plurality of line conductors provided on said ground plate, with said at least one insulating interlayer provided therebetween;
- at least one terminal for connecting to the exterior;
- and
- a shield plate provided on a highest layer of the plurality of line conductors, with said at least one insulating interlayer provided therebetween, said shield plate being connected to the ground potential;
- wherein said terminal is a patch antenna.
5 more elements
A high frequency semiconductor device comprising:
- a semiconductor substrate;
- a ground plate connected to a ground potential;
- at least one insulating interlayer;
- a plurality of line conductors provided above said ground plate, with said at least one insulating interlayer provided therebetween;
- at least one terminal for connecting to the exterior;
- and
- a shield plate provided on a highest layer of the plurality of line conductors, with said at least one insulating interlayer provided therebetween, said shield plate being connected to the ground potential;
- wherein said at least one insulating interlayer is made of one of polyimide and benzocyclobutene.
5 more elements
A high frequency semiconductor device comprising:
- a semiconductor substrate having first and second major surfaces;
- at least one active element formed on said first major surface of said semiconductor substrate:
- a ground plate connected to a ground potential, said ground plate being provided on said first major surface;
- at least one insulating interlayer;
- a plurality of line conductors provided on said ground plate, with said at least one insulating interlayer provided therebetween, the plurality of line conductors individually acting as a microstrip line combining with said ground plate;
- at least one terminal for connecting to the exterior, and
- a shield plate provided on a highest layer of the plurality of line conductors, with said at least one insulating interlayer provided therebetween, said shield plate being connected to the ground potential and substantially covering the entirety of said semiconductor substrate, wherein said at least one terminal is formed on said second major surface of said semiconductor substrate.
4 more elements
Dependencies are inferred from the claim text.