Magnetoresistive effect device utilizing a magnetization-coupling layer which couples adjacent ferromagnetic layers perpendicularly

A magnetoresistance effect element, comprising:

• a first ferromagnetic layer having the magnetization of a first direction,
• an insertion layer formed on the first ferromagnetic layer and having a mixed phase film containing two kinds of oxides of a same metal each having a different valence number, or a laminated film having two oxide layers of a same metal each having a different valence number,
• a second ferromagnetic layer formed on the insertion layer and having a magnetization of a direction substantially perpendicular to the first direction, a non-magnetic layer, and
• a third ferromagnetic layer formed on the non-magnetic layer and having a magnetization of a direction substantially parallel to the first direction at zero magnetic field.

A magnetoresistance effect head, comprising:

• a first ferromagnetic layer having a magnetization of a first direction,
• a magnetization-coupling layer formed on the first ferromagnetic layer,
• a second ferromagnetic layer formed on the magnetization-coupling layer, perpendicularly magnetic coupled with the first ferromagnetic layer by the magnetization-coupling layer, and having a magnetization of a direction substantially perpendicular to the first direction,
• a non-magnetic layer, and
• a third ferromagnetic layer formed on the non-magnetic layer and having a magnetization of a direction substantially parallel to the first direction at zero magnetic field.

A magnetoresistance effect head, comprising:

• a first ferromagnetic layer having the magnetization of a first direction,
• an insertion layer formed on the first ferromagnetic layer and having a mixed phase film containing two kinds of oxides of a same metal each having a different valence number, or a laminated film formed by laminating two oxide layers of a same metal each having a different valence number,
• a second ferromagnetic layer formed on the insertion layer and having magnetization of a direction substantially perpendicular to the first direction, a non-magnetic layer, and
• a third ferromagnetic layer formed on the non-magnetic layer and having a magnetization of a direction substantially parallel to the first direction at zero magnetic field.

A magnetic reproducing apparatus, comprising:

• a magnetic recording medium and a magnetoresistance effect head reproducing a magnetic information recorded in the magnetic recording medium, the magnetoresistance effect element comprising:
• a first ferromagnetic layer having a magnetization of the a first direction,
• a magnetization-coupling layer formed on the first ferromagnetic layer,
• a second ferromagnetic layer formed on the magnetization-coupling layer, perpendicularly magnetic coupled with the first ferromagnetic layer by the magnetization-coupling layer, and having a magnetization substantially perpendicular to the first direction, a non-magnetic layer, and
• a third ferromagnetic layer formed on the non-magnetic layer and having a magnetization of a direction substantially parallel to the first direction at zero magnetic field.

A magnetic reproducing apparatus comprising:

• a magnetic recording medium and a magnetoresistance effect head reproducing a magnetic information recorded in the magnetic recording medium, wherein the magnetoresistance effect element comprising:
• a first ferromagnetic layer having magnetization of a first direction,
• an insertion layer formed on the first ferromagnetic layer and having a mixed phase film containing two kinds of oxides of a same metal each having a different valence number or a laminated film of two oxide layers of a same metal each having a different valence number,
• a second ferromagnetic layer formed on the insertion layer, and having magnetization of a direction substantially perpendicular to the first direction, a non-magnetic layer, and
• a third ferromagnetic layer formed on the non-magnetic layer and having the magnetization of a direction substantially perpendicular to the first direction.

A magnetoresistance element, comprising:

• a spin valve film comprising a first ferromagnetic layer having a magnetization substantially fixed in a first direction, a nonmagnetic layer formed on the first ferromagnetic layer, and a second ferromagnetic layer having a magnetization in a second direction substantially perpendicular to the first direction;
• a magnetic coupling layer formed on either one of the first and second ferromagnetic layers;
• and
• a first ferromagnetic layer formed on the magnetic coupling layer and having a magnetization in a direction substantially perpendicular to the magnetization direction of the one of the first and the second ferromagnetic layers.