Transconductor having structure of crossing pairs
AssigneeSamsung Electronics Co., Ltd.
InventorsJeong-won Lee, Gea-ok Cho, Jung-eun Lee
Life of this patent
Estimating the term…
Loading patent…
AssigneeSamsung Electronics Co., Ltd.
InventorsJeong-won Lee, Gea-ok Cho, Jung-eun Lee
Estimating the term…
A transconductor for generating a current corresponding to an input voltage. The transconductor has a crossing pairs structure. The transconductor comprises a first and a second MOS (Metal-Oxide Semiconductor) transistors mutually connected in series to a voltage source. A first bipolar transistor is connected to a current source. A collector terminal of the first bipolar terminal is connected to an output current terminal. An emitter terminal of the first bipolar terminal is connected to a gate terminal of the second MOS transistor. A second bipolar transistor is connected in series to the first bipolar transistor. A base terminal of the second bipolar transistor is connected to a node between the first MOS transistor and the second MOS transistor. A third MOS transistor is provided. A gate terminal of the third MOS transistor is connected to an input terminal for a signal from outside. A drain terminal of the third MOS transistor is connected to an emitter terminal of the second bipolar transistor.
A transconductor for generating a current corresponding to an input voltage, the transconductor having crossing pairs structure, said transconductor comprising:
Dependencies are inferred from the claim text.