Semiconductor-on-insulator resistor-capacitor circuit
AssigneeIntel Corporation
InventorsHarry Muljono, Stefan Rusu
Life of this patent
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Abstract
A semiconductor device may be formed with a floating body positioned over an insulator in a semiconductor structure. A gate may be formed over the floating body but spaced therefrom. The semiconductor structure may include doped regions surrounding the floating body The floating body provides a distributed capacitance and resistance along its length to form an integrated RC circuit. The extent of the resistance is a function of the cross-sectional area of the floating body along the source and drain regions and its capacitance is a function of the spacing between the doped regions and the body and between the gate and the body. In some embodiments of the present invention, compensation for input voltage variations may be achieved.
Claims8
A semiconductor device comprising:
- a semiconductor structure including a semiconductor layer over an insulator layer;
- and
- a floating body formed in said semiconductor layer, said body having a pair of opposed end portions and a pair of opposed side portions, and an electrical connection to each of said end portions, said body forming an RC circuit whose resistance and capacitance self compensates for changes of an input voltage applied to said body through an electrical connection to one of said end portions.
Dependencies are inferred from the claim text.