Methods of fabricating silicon carbide crystals
AssigneeCree, Inc.
InventorStephan Mueller
Life of this patent
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Abstract
Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern and growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern. Seed holders and seed crystals are provided for such methods. Silicon carbide crystals having regions of higher and lower defect density are also provided.
Claims10
A method of producing silicon carbide crystals, comprising:
- forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern by:
- providing regions of higher thermal conductivity in a seed crystal holder, the regions of higher thermal conductivity corresponding to the predefined pattern;
- mounting the seed crystal on the seed crystal holder;
- and
- growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern.
A method of producing silicon carbide crystals, comprising:
- forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern by:
- providing regions of higher thermal conductivity in a seed crystal holder, the regions of higher thermal conductivity corresponding to the predefined pattern;
- mounting the seed crystal on the seed crystal holder;
- and
- growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern;
- wherein the providing regions of higher thermal conductivity comprises:
- removing portions of the seed crystal holder so as to provide cavities in the seed crystal holder;
- and
- filling the cavities in the seed crystal holder with a material having a higher thermal conductivity than a material of the seed crystal holder.
Dependencies are inferred from the claim text.