Optoelectronic gas sensor based on optodes

An optoelectronic gas sensor, comprising:

• separate photosensitive elements disposed in a single plane in a semiconductor substrate;
• sections of an optode material covering the photosensitive elements;
• and
• an opto-transmitter disposed centrally between the photosensitive elements, the opto-transmitter and the photosensitive elements integrated at least one of into and onto the semiconductor substrate, the opto-transmitter being spaced a distance away from the sections of the optode material via an annular gap, the opto-transmitter having a height that is much larger than a thickness of the optode material, the opto-transmitter emitting light into air before reaching the photosensitive elements through the optode material at least one of directly and after being reflected on inside walls of a casing surrounding a gas sensor chip.

An electronic component for use in producing an optoelectronic gas sensor, comprising:

• separate photosensitive elements integrated at least one of into and onto a semiconductor substrate in sectors with central symmetry while maintaining a spacing;
• a thin dielectric insulation layer covering photosensitive semiconductor areas;
• contact openings being provided with contacts to the photosensitive semiconductor elements at defined peripheral locations on the photosensitive semiconductor elements;
• and
• metallized strips being provided in spaces between the photosensitive elements and leading to a central contact pad for connecting an opto-transmitter.