Semiconductor device having radiation structure

A semiconductor device, comprising:

• first and second semiconductor chips:
• and
• first and second radiation members thermally and electrically connected to the first and second semiconductor chips interposed therebetween through a bonding member, and having a radiation surface for radiation radiating heat from the first and second semiconductor chips, wherein:
• the first radiation member has first and second protruding portions protruding toward the first and second semiconductor chips;
• and
• first and second front end portions of the first and second protruding portions are thermally and electrically connected to the first and second semiconductor chips through the bonding member.

A semiconductor device, comprising:

• a semiconductor chip having an element formation surface and a back surface:
• a first conductive member bonded to the element formation surface of the semiconductor chip through a first bonding member having electrical conductivity;
• a second conductive member bonded to the back surface of the semiconductor chip through a second bonding member having electrical conductivity;
• and
• a third conductive member bonded to the first conductive member through a third bonding member having electrical conductivity, at an opposite side of the semiconductor chip,
• wherein a bonding area between the first conductive member and the third conductive member is smaller than that between the first conductive member and the semiconductor chip.

A semiconductor device, comprising:

• a semiconductor chip having an element formation surface and a back surface at an opposite side of the element formation surface;
• a first conductive member electrically connected to the element formation surface of the semiconductor chip;
• a second conductive member electrically connected to the back surface of the semiconductor;
• a third conductive member electrically connected to the first conductive member at an opposite side of the semiconductor chip;
• and
• a sealing member sealing the element formation surface and the back surface of the semiconductor chip respectively electrically connected to the first and second conductive members, and a face of the third conductive member electrically connected to the first conductive member, wherein:
• the first conductive member has a step portion at a portion facing an outer periphery of the sealing member, the first conductive member having a thin thickness portion by providing the step portion.

A semiconductor device, comprising:

• a substrate made of Si, having an element formation surface and a back surface at an opposite side of the element formation surface;
• an electrode formed on the element formation surface of the substrate and made of pure Al excluding an impurity;
• and
• a barrier metal disposed between the electrode and the substrate, for preventing Si from being dissolved in the electrode.

A semiconductor device, comprising:

• a semiconductor chip having a first surface and a second surface:
• a first radiation member bonded to the first surface of the semiconductor chip through a first bonding member having thermal conductivity;
• and
• a second radiation member bonded to the second surface of the semiconductor chip through a second bonding member having thermal conductivity,
• the second radiation member having a concave portion for holding therein the semiconductor chip therein.

A semiconductor device, comprising:

• a semiconductor chip having a first surface and a second surface:
• a first radiation member having a convex portion that is bonded to the first surface of the semiconductor chip through a first bonding member having thermal conductivity;
• and
• a second radiation member bonded to the second surface of the semiconductor chip through a second bonding member having thermal conductivity;
• a control electrode provided on the first surface of the semiconductor chip;
• a lead frame electrically connected to the control electrode, wherein:
• one of the first radiation member and the second radiation member has a protruding portion at a side facing the semiconductor chip;
• the protruding portion is fixedly inserted into a hole formed in the lead frame to fix the one of the first radiation member and the second radiation member;
• and
• a spacer is disposed in a space defined between the one of the first radiation member and the second radiation member to position the one of the first radiation member and the second radiation member, and the semiconductor chip in a thickness direction of the semiconductor chip.

A semiconductor device, comprising:

• a semiconductor chip having a first surface and a second surface;
• a first conductive member bonded to the first surface of the semiconductor chip through a first soldering member;
• and
• a second conductive member bonded to the second surface of the semiconductor chip through a second soldering member, a fusing point of which is lower than that of the first soldering member.