Adhesive film for semiconductor, lead frame and semiconductor device using the same, and method for manufacturing semiconductor device
AssigneeHitachi Chemical Company, Ltd.
InventorsToshiyasu Kawai, Hidekazu Matsuura
Life of this patent
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Abstract
An adhesive film for semiconductor, which comprises at least one resin layer, and, after bonded to a lead frame, has at 25° C. a 90°-peel strength of at least 5 N/m between the resin layer and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at one point of temperatures ranging from 0 to 250° C. a 90°-peel strength of at most 1000 N/m between the resin layer and each of the lead frame and the sealing material; a lead frame and a semiconductor device using the adhesive film for semiconductor; and a method of producing a semiconductor device.
Claims20
An adhesive film for semiconductor, which comprises at least one resin layer A, and, after bonded to a lead frame, has at 25° C. a 90°-peel strength of at least 5 N/m between the resin layer A and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at a point of temperatures ranging from 0 to 250° C. a 90°-peel strength of at most 1000 N/m between the resin layer A and each of the lead frame and the sealing material.
A method of producing a semiconductor device, comprising
- a stop of bonding an adhesive film for semiconductor to a side of a load frame having inner leads and a die pad,
- a step of bonding a semiconductor element to the die pad on the other exposed side of the lead frame,
- a step of connecting the semiconductor element to the inner leads with wires by wire bonding,
- a step of sealing the exposed side of the lead frame, the semiconductor element and the wires with a sealing material, and
- a step of peeling off the adhesive film for semiconductor from the lead frame and the sealing material.
Dependencies are inferred from the claim text.