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US 6,699,798 B2Granted
Promoting adhesion of fluoropolymer films to semiconductor substrates
AssigneeIntel Corporation
InventorLee D. Rockford
Life of this patent
Estimating the term…
Abstract
Adhesion of high fluorine content films to semiconductor substrates may be improved by forming an intervening adherence layer. The adherence layer may be formed from a plasma gas. In some cases, the adherence layer may be used to adhere photoresist for advanced photolithography processes to silicon substrates.
Claims18
A method comprising:
- forming a fluoropolymer layer from a plasma gas on a semiconductor substrate;
- and
- forming a second layer compositionally different from said fluoropolymer layer, said second layer containing fluorine, adhered to said substrate using said fluoropolymer layer.
A method comprising:
- using plasma polymerization and deposition to form a fluoropolymer layer on a semiconductor substrate;
- and
- adhering a second layer containing fluorine to said substrate using said fluoropolymer layer such that said second layer and said fluoropolymer layer are compositionally different.
A method comprising:
- placing a semiconductor structure in a plasma chamber;
- depositing a fluoropolymer layer from a plasma gas in said chamber;
- and
- forming a fluorine containing photoresist over said fluoropolymer layer.
1 more element
Dependencies are inferred from the claim text.