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US 6,699,398 B1Granted
Effective dry etching process of actinide oxides and their mixed oxides in CF4/O2/N2 plasma
AssigneeHanyang Hak Won Co., Ltd.
InventorYong-Soo Kim
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Abstract
A process for gas-phase etching of actinide oxides from a substrate by using plasma power comprising the steps of: a) preheating actinide oxides on the substrate within a process chamber filled with fluorine-containing gas and exposing it to plasma power, and subsequently b) etching actinide oxides from the substrate using a plasma gas-phase reactant system.
Claims28
A process for gas-phase etching of actinide oxides from a substrate using plasma power and comprising:
- a) preheating actinide oxides on the substrate within a process chamber including fluorine-containing gas and exposing it to plasma power, and subsequently
- b) etching actinide oxides from the substrate using said fluorine-containing plasma gas.
A process for gas-phase etching of trans-uranium (TRU) oxides from a nuclear facility device using plasma power and comprising:
- a) preheating the TRU oxides on the nuclear facility device within a process chamber including fluorine-containing gas and exposing it to plasma power, and subsequently
- b) etching the TRU oxides from the nuclear facility device using said fluorine-containing plasma gas.
Dependencies are inferred from the claim text.