Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof

An optical integrated device, comprising:

• a submount;
• an array type semiconductor laser chip including two or more light emitting portions and having a pitch between the light emitting portions of the array type semiconductor laser chip, the array type semiconductor chin having an active region and a distributed Bragg reflection (DBR) region;
• and
• a planar type optical waveguide element including two or more planar optical waveguides formed thereon, and having a pitch between the optical waveguides of the planar type optical waveguide element the same as the pitch between the light emitting portions of the array type semiconductor laser chip,
• wherein the array type semiconductor laser chip and the planar type optical waveguide element are both mounted on the submount so that the two or more light emitting portions of the array type semiconductor laser chip correspond to the two or more optical waveguides of the planar type optical waveguide element, and
• a contact surface area between the active region and the submount is different from a contact surface area between the DBR region and the submount.