Semiconductor thin film and semiconductor device

A semiconductor device comprising:

• a semiconductor film comprising crystalline silicon formed on an insulating surface;
• a channel region formed in the semiconductor film;
• a gate insulating film adjacent to the semiconductor film;
• and
• a gate electrode adjacent to the channel region with the gate insulating film interposed therebetween,
• wherein the semiconductor film has a {110} orientation and a concentration of C (carbon), N (nitrogen), and S (sulfur) in the semiconductor film is less than 5×1018 atoms/cm3, and a concentration of O (oxygen) in the semiconductor film is less than 1.5×1019 atoms/cm3, and a ratio of the {110} orientation is not smaller than 0.9.

A semiconductor device comprising:

• a crystalline semiconductor film formed on an insulating surface;
• a channel region formed in the semiconductor film;
• a gate insulating film adjacent to the semiconductor film;
• and
• a gate electrode adjacent to the channel region with the gate insulating film interposed therebetween,
• wherein the semiconductor film has a {110} orientation and a concentration of C (carbon), N (nitrogen), and S (sulfur) in the semiconductor film is less than 5×1018 atoms/cm3, and a concentration of O (oxygen) in the semiconductor film is less than 1.5×1019 atoms/cm3, and said crystalline semiconductor film comprises SiXGe1-x (0.9≦X≦0.99).

A semiconductor device comprising:

• a semiconductor film comprising a plurality of silicon crystals formed on an insulating surface, said plurality of silicon crystals extending approximately in one direction;
• a channel region formed in the semiconductor film;
• a gate insulating film adjacent to the semiconductor film;
• and
• a gate electrode adjacent to the channel region with the gate insulating film interposed therebetween,
• wherein the semiconductor film has a {110} orientation and a concentration of C (carbon), N (nitrogen), and S (sulfur) in the semiconductor film is less than 5×1018 atom s/cm3, and a concentration of O (oxygen) in the semiconductor film is less than 1.5×1019 atoms/cm3.