Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorKoichiro Tanaka
Life of this patent
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Abstract
YAG laser can simultaneously emit a plurality of laser beams having different wavelengths from each other. By simultaneously irradiating the laser beams having different wavelengths from each other to a same region of a non-single crystal semiconductor film, an interference influence is suppressed to obtain a more uniform laser beam. For example, by simultaneously generating second and third harmonics of YAG laser to irradiate the same region through suitable optical system, a laser beam having higher uniformity and having an energy in which interference is highly suppressed is obtained.
Claims22
A laser beam irradiation method comprising:
- irradiating a plurality of laser beams having different wavelengths from each other on a same region simultaneously,
- wherein each of said plurality of laser beams has a linear cross section on said same region.
A laser beam irradiation method comprising:
- preparing a non single crystal semiconductor film formed over a substrate;
- irradiating a plurality of laser beams having different wavelengths from each other onto a same region of said semiconductor film simultaneously, each of said plurality of laser beams having a linear cross-section on said same region;
- and
- scanning said plurality of laser beams relatively to said semiconductor film.
A method for manufacturing a semiconductor device comprising a thin film transistor over a substrate, said method comprising:
- forming a non-single crystal semiconductor film over said substrate;
- and
- irradiating a plurality of laser beams having different wavelengths from each other to a region of said semiconductor film simultaneously.
A method for manufacturing a semiconductor device comprising a thin film transistor over a substrate, said method comprising:
- forming an amorphous semiconductor film over said substrate;
- and
- irradiating a plurality of laser beams having different wavelengths from each other to a region of said semiconductor film simultaneously to change said amorphous semiconductor film to a crystalline semiconductor film.
Dependencies are inferred from the claim text.